Datasheet > RFP18N10

RFP18N10

更新时间： 2024-11-11 22:09:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	42K
描述
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

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数据手册
替代型号

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RFP18N10 数据手册

RFM18N08, RFM18N10,

RFP18N08, RFP18N10

Semiconductor

18A, 80V and 100V, 0.100 Ohm,

N-Channel Power MOSFETs

September 1998

Features

Description

[ /Title

(RFM18

N08,

RFM18

N10,

• 18A, 80V and 100V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

• r

= 0.100Ω

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

These types can be operated directly from integrated cir-

cuits.

RFP18N

08,

Formerly developmental type TA17421.

RFP18N Ordering Information

10)

/Subject

(18A,

80V and

100V,

0.1Ohm,

N-Chan-

nel

PART NUMBER

RFM18N08

PACKAGE

BRAND

RFM18N08

Symbol

TO-204AA

TO-220AB

RFM18N10

RFP18N08

RFP18N10

RFP18N08

RFP18N10

NOTE: When ordering, use the entire part number.

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

Packaging

JEDEC TO-204AA

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

(TAB)

204AA,

TO-

SOURCE (PIN 2)

GATE (PIN 1)

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1446.1

5-1

12 3 4 5

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RFP18N10 替代型号

型号	品牌	替代类型	描述	数据表
STP20NE10	STMICROELECTRONICS	功能相似	N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET

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