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RFMA0912-1W-Q7 PDF预览

RFMA0912-1W-Q7

更新时间: 2024-11-16 06:07:35
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EXCELICS /
页数 文件大小 规格书
4页 146K
描述
9.50 - 11.70 GHz High-Gain Surface Mounted PA

RFMA0912-1W-Q7 数据手册

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RFMA0912-1W-Q7  
UPDATED: 04/24/2008  
9.50 – 11.70 GHz High-Gain Surface Mounted PA  
FEATURES  
9.50 – 11.70GHz Operating Frequency Range  
30dBm Output Power @1dB Compression  
30dB Typical Power Gain @1dB Compression  
-41dBc OIMD3 @Pout = 20dBm/tone  
7X7mm QFN Package  
APPLICATIONS  
Point-to-point and point-to-multipoint radio  
Military Radar Systems  
ELECTRICAL CHARACTERISTICS (TB=25 °C)  
SYMBOL  
PARAMETER/TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
F
Operating Frequency Range  
9.50  
29.0  
27.5  
11.70  
GHz  
dBm  
dB  
P1dB  
G1dB  
Output Power @1dB Gain Compression  
30.0  
30.0  
Gain @1dB Gain Compression  
Output 3rd Order Intermodulation Distortion  
@f=10MHz, Pout = 20dBm/tone  
OIMD3  
-41  
-38  
dBc  
Input RL  
Input Return Loss  
-10  
-6  
dB  
dB  
mA  
mA  
V
Output RL Output Return Loss  
ID1  
ID2  
Drain Current1  
Drain Current1  
180  
800  
7
220  
1100  
8
VD1, VD2  
VG1, VG2  
Rth  
Drain Voltage  
Gate Voltage  
Thermal Resistance2  
-2.5  
-30  
-0.3  
V
oC/W  
oC  
9
Tb  
Operating Base Plate Temperature  
+80  
1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.  
2. Measured result when used with Excelics recommended evaluation board.  
MAXIMUM RATINGS AT 25°C3,4  
SYMBOL  
CHARACTERISTIC  
ABSOLUTE  
CONTINOUS  
VD1, VD2 Drain to Source Voltage  
VG1, VG2 Gate to Source Voltage  
12V  
-5V  
8 V  
-2.5 V  
ID1, ID2  
PIN  
Drain Current  
Idss  
220, 1100mA  
@ 3dB compression  
150°C  
Input Power  
20dBm  
175°C  
-65/175°C  
15.0W  
TCH  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
TSTG  
-65/150°C  
PT  
12.6W  
3. Operation beyond absolute or continuous ratings may result in permanent damage or reduction of MTTF respectively.  
4. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –TB)/RTH; where TB = Temperature of Base Plate  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 4  
Revised May 2008  

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