RFMA0912-1W-Q7
UPDATED: 04/24/2008
9.50 – 11.70 GHz High-Gain Surface Mounted PA
FEATURES
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9.50 – 11.70GHz Operating Frequency Range
30dBm Output Power @1dB Compression
30dB Typical Power Gain @1dB Compression
-41dBc OIMD3 @Pout = 20dBm/tone
7X7mm QFN Package
APPLICATIONS
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Point-to-point and point-to-multipoint radio
Military Radar Systems
ELECTRICAL CHARACTERISTICS (TB=25 °C)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9.50
29.0
27.5
11.70
GHz
dBm
dB
P1dB
G1dB
Output Power @1dB Gain Compression
30.0
30.0
Gain @1dB Gain Compression
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Pout = 20dBm/tone
OIMD3
-41
-38
dBc
Input RL
Input Return Loss
-10
-6
dB
dB
mA
mA
V
Output RL Output Return Loss
ID1
ID2
Drain Current1
Drain Current1
180
800
7
220
1100
8
VD1, VD2
VG1, VG2
Rth
Drain Voltage
Gate Voltage
Thermal Resistance2
-2.5
-30
-0.3
V
oC/W
oC
9
Tb
Operating Base Plate Temperature
+80
1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.
2. Measured result when used with Excelics recommended evaluation board.
MAXIMUM RATINGS AT 25°C3,4
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINOUS
VD1, VD2 Drain to Source Voltage
VG1, VG2 Gate to Source Voltage
12V
-5V
8 V
-2.5 V
ID1, ID2
PIN
Drain Current
Idss
220, 1100mA
@ 3dB compression
150°C
Input Power
20dBm
175°C
-65/175°C
15.0W
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
-65/150°C
PT
12.6W
3. Operation beyond absolute or continuous ratings may result in permanent damage or reduction of MTTF respectively.
4. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –TB)/RTH; where TB = Temperature of Base Plate
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised May 2008