Datasheet > RFMA1720-1W-Q7

RFMA1720-1W-Q7

更新时间： 2024-09-23 06:07:35

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	142K
描述
17.7 - 19.7 GHz High-Gain Surface Mounted PA

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RFMA1720-1W-Q7 数据手册

RFMA1720-1W-Q7

UPDATED: 04/24/2008

17.7 – 19.7 GHz High-Gain Surface Mounted PA

FEATURES

•

17.7 – 19.7GHz Operating Frequency Range

29.0dBm Output Power @1dB Compression

30.0dB Typical Power Gain @1dB Compression

-41dBc OIMD3 @Pout = 19dBm/tone

7X7mm QFN Package

APPLICATIONS

•

Point-to-point and point-to-multipoint radio

Military Radar Systems

ELECTRICAL CHARACTERISTICS (T_B=25 °C)

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

17.7

28.0

TYP

MAX

UNITS

GHz

dBm

Operating Frequency Range

19.7

P_1dB

Output Power @1dB Gain Compression

Gain @1dB Gain Compression

29.0

30.0

G_1dB

Output 3^rdOrder Intermodulation Distortion

@∆f=10MHz, Pout = 19dBm/tone

OIMD3

-41

-10

-14

-38

-8

dBc

Input RL

Input Return Loss

Output RL Output Return Loss

-10

I_D1

I_D2

Drain Current¹

180

800

220

900

Drain Current¹

V_D1, V_D2

V_G1, V_G2

Rth

Drain Voltage

Gate Voltage

-2.5

-30

-0.25

Thermal Resistance²

^oC/W

^oC

Operating Base Plate Temperature

+80

1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.

2. Rth is mounting dependent. Measured result when used with Excelics recommended evaluation board.

MAXIMUM RATINGS AT 25°C^3,4

SYMBOL

CHARACTERISTIC

ABSOLUTE

CONTINOUS

V_D1, V_D2Drain to Source Voltage

V_G1, V_G2Gate to Source Voltage

12V

-5V

8 V

-2.5 V

I_D1, I_D2

P_IN

Drain Current

Idss

220, 900mA

@ 3dB compression

150°C

Input Power

20dBm

175°C

-65/175°C

15.0W

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

-65/150°C

P_T

12.6W

3. Operation beyond absolute or continuous ratings may result in permanent damage or reduction of MTTF respectively.

4. Bias conditions must also satisfy the following equation V_DS*I_DS< (T_CH–T_B)/R_TH; where T_B= Temperature of Base Plate

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised May 2008

12 3 4

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