RFMA1213-1W
ISSUED 05/06/2005
12.70 – 13.30 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
12.70–13.30GHz Operating Frequency Range
29.5dBm Output Power at 1dB Compression
29.0 dB Typical Power Gain @ 1dB Gain Compression
-41dBc Typical OIM3 @ each tone Pout 18.5dBm
Excelics
RFMA1213
-1W
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
F
PARAMETER/TEST CONDITIONS
Operating Frequency Range
MIN
TYP
MAX
UNITS
12.7
13.3
GHz
P1dB
G1dB
Output Power at 1dB Gain Compression
28.5
26
29.5
29
dBm
dB
Gain @1dB gain compression
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
OIMD3
-41
-12
-15
900
7
-38
-8
dBc
dB
dB
mA
V
Input RL
Input Return Loss
Output RL Output Return Loss
Idd
Vdd
Vgg
Rth
Tb
Drain Current
1050
8
Drain Supply Voltage
Gate Supply Voltage
-5
V
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
7
7.5
oC/W
- 30
+ 80
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
Vdd
Vgg
Idd
CHARACTERISTIC
ABSOLUTE
CONTINUOUS1,2
Drain Supply Voltage
Gate Supply Voltage
Drain Current
12V
-8V
8V
-3 V
Idss
1.9A
Igg
Gate Current
132mA
20dBm
175°C
-65/175°C
15.0W
22 mA
PIN
Input Power
@ 3dB compression
150°C
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
-65/150°C
12.6W
PT
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –THS)/RTH; where THS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Page 1 of 2
Revised May 2005
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com