RFMA0912-1W
UPDATED 2/01/2005
9.50 – 11.70 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
9.50 – 11.70GHz Operating Frequency Range
30.0dBm Output Power at 1dB Compression
31.0 dB Typical Power Gain @ 1dB Gain Compression
-41dBc Typical OIM3 @ each tone Pout 19.0dBm
Excelics
RFMA0912
-1W
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
F
PARAMETER/TEST CONDITIONS
Operating Frequency Range
MIN
9.5
29
TYP
MAX
UNITS
GHz
dBm
dB
11.7
P1dB
G1dB
Output Power at 1dB Gain Compression
30
31
Gain @1dB gain compression
28
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm
OIMD3
-38
-41
dBc
Input RL
Input Return Loss
-10
-6
-8
dB
dB
mA
V
Output RL Output Return Loss
Idd
Vdd
Vgg
Rth
Tb
Drain Current
900
7
1050
8
Drain Supply Voltage
Gate Supply Voltage
-5
V
oC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
7
7.5
- 30
+ 80
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS1,2
Vdd
Vgg
Drain Supply Voltage
Gate Supply Voltage
12V
-8V
8V
-3 V
Idd
Igg
PIN
Drain Current
Idss
132mA
20dBm
175°C
1.9A
22 mA
Gate Current
Input Power
@ 3dB compression
150°C
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175°C
15.0W
-65/150°C
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised February 2005