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RF071M2S_11 PDF预览

RF071M2S_11

更新时间: 2024-11-06 09:34:59
品牌 Logo 应用领域
罗姆 - ROHM 二极管快恢复二极管
页数 文件大小 规格书
4页 994K
描述
Fast Recovery Diode

RF071M2S_11 数据手册

 浏览型号RF071M2S_11的Datasheet PDF文件第2页浏览型号RF071M2S_11的Datasheet PDF文件第3页浏览型号RF071M2S_11的Datasheet PDF文件第4页 
Data Sheet  
Fast Recovery Diode  
RF071M2S  
Applications  
Dimensions(Unit : mm)  
Land size figure (Unit : mm)  
1.2  
0.1±0.1  
ꢀꢀꢀ 0.05  
General rectification  
1.6±0.1  
Features  
1)Small power mold type.(PMDU)  
2)Ultra low VF  
3)Ultra high switching speed  
4)Low switching loss  
PMDU  
Construction  
Silicon epitaxial planer  
Structure  
0.9±0.1  
0.8±0.1  
ROHM : PMDU  
JEDEC :SOD-123  
Manufacture Date  
Taping dimensions(Unit : mm)  
0.25±0.05  
φ1.55±0.05  
2.0±0.05  
4.0±0.1  
4.0±0.1  
φ1.0±0.1  
1.81±0.1  
1.5MAX  
Absolute maximum ratings(Ta=25°C)  
Parameter  
Reverse voltage (repetitive)  
Reverse voltage (DC)  
Limits  
Symbol  
VRM  
VR  
Unit  
200  
V
V
200  
IF  
Forward currentDC)  
1
0.7  
A
Average rectified forward current (*1)  
Forward current surge peak (60Hz1cyc)  
Junction temperature  
Io  
IFSM  
A
15  
A
150  
Tj  
°C  
°C  
Storage temperature  
55 to 150  
Tstg  
(*1)Mounted on epoxy board. 180°Half sine wave  
Electrical characteristics(Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
0.79  
0.01  
12  
Max.  
0.85  
10  
Unit  
V
Conditions  
VF  
IR  
-
-
-
IF=0.7A  
Reverse current  
μA  
ns  
VR=200V  
IF=0.5A,IR=1A,Irr=0.25*IR  
Reverse recovery time  
25  
trr  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  
2011.05 - Rev.E  

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