RF081M2S

更新时间： 2024-11-06 06:07:31

品牌	Logo	应用领域
罗姆 - ROHM		二极管超快速恢复二极管
页数	文件大小	规格书
4页	127K
描述
Super fast recovery diode

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中文翻译

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RF081M2S 数据手册

RF081M2S

Diodes

Super fast recovery diode

RF081M2S

zSeries

Standard Fast Recovery

zDimensions (Unit : mm)

zLand size figure (Unit : mm)

1.2

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

zApplications

General rectification

zFeatures

1) Small power mold type. (PMDU)

2) High switching speed.

3) Low Reverse current

PMDU

zStructure

0.9±0.1

zConstruction

0.8±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

Silicon epitaxial planar

zTaping specifications (Unit : mm)

0.25±0.05

φ1.55±0.05

2.0±0.05

4.0±0.1

φ1.0±0.1

1.81±0.1

1.5MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter

Repetitive peak Reverse voltage

Reverse voltage

Limits

Conditions

Symbol

V_RM

Unit

200

0.8

1.0

V_R

Direct voltage

Glass epoxy substrate mounted

Average rectified forward current

50×50mm Glass epoxy substrate mounted

60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25

Forward current surge peak

Junction temperature

Storage temperature

I_FSM

℃

150

℃

-55 to +150

Tstg

zElectrical characteristic (Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

－

Typ.

0.83

0.86

0.01

Max.

Unit

I_F=0.8A

I_F=1.0A

V_R=200V

0.95

0.98

Forward voltage

－

I_R

trr

Reverse current

µA

－

I_F=0.5A,I_R=1A,Irr=0.25*IR

Reverse recovery time

Thermal Resistance

－

Rth(j-l)

℃／W junction to lead

－

1/3

12 3 4

中文翻译

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