Datasheet > RF-MOSFET-1200V

RF-MOSFET-1200V

更新时间： 2023-12-06 20:10:52

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	141K
描述
The ARF family of RF powerMOSFETs is optimized for applications requiring frequencies as high as 1

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RF-MOSFET-1200V 数据手册

ARF1505

BeO

1525-xx

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

300V 750W

40MHz

TheARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientiﬁc, commercial,

medical and industrial RF power generator and ampliﬁer applications up to 40 MHz.

• Speciﬁed 300 Volt, 27.12 MHz Characteristics:

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

•

Output Power = 750 Watts.

Gain = 17dB (Class C)

Efﬁciency > 75%

• Nitride Passivated Die for Improved Reliability.

• RoHS Compliant

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

ARF1505

1200

UNIT

Volts

V_DSS

I_D

Drain-Source Voltage

Amps

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

V_GS

P_D

±30

Volts

1500

Watts

Total Device Dissipation @ T_C= 25°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 175

300

°C

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

1200

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

Volts

V_DS_(ON)

On State Drain Voltage (I_D_(ON)= 12.5A, V_GS= 10V)

9.5

100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

I_DSS

μA

1000

±400

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 12.5A)

RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

I_GSS

g_fs

V_isolation

V_GS_(TH)

5.5

TBD

mhos

Volts

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

THERMAL CHARACTERISTICS

Characteristic (per package unless otherwise noted)

Symbol

R_θJC

MIN

TYP

MAX

UNIT

Junction to Case

0.10

°C/W

R_θJHS

Junction to Sink ^{(Use High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)}

0.16

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4

中文翻译

下载PDF

与RF-MOSFET-1200V相关器件

型号	品牌	获取价格	描述	数据表
RF-MOSFET-140V	MICROCHIP	获取价格	The VRF family of RF MOSFETs includes improved replacements forindustry-standard RF transi
RF-MOSFET-170V	MICROCHIP	获取价格	The VRF family of RF MOSFETs includes improved replacements forindustry-standard RF transi
RF-MOSFET-500V	MICROCHIP	获取价格	The ARF family of RF powerMOSFETs is optimized for applications requiring frequencies as h
RF-MOSFET-80V	MICROCHIP	获取价格	The VRF family of RF MOSFETs includes improved replacements forindustry-standard RF transi
RF-MOSFET-DRIVER	MICROCHIP	获取价格	The DRF1200/01 hybrids integrate drivers, bypass capacitors and RF MOSFETs into a single p
RFMT-10LM-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-10-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-12M-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-15H-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-15M-SM2	MINI	获取价格	Double Balanced Mixer

与RF-MOSFET-1200V相关文章

解读BSP135H6327资料：电气参数及替换型号推荐
2024-07-01

1
FDG6302P资料解析：电气参数、产品特性
2024-07-01

2
SBAV99WT1G资料手册：参数信息、产品特性、替代型号推荐
2024-07-01

1
MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

8

产品中心

服务支持

精选活动

关于我们

帮助中心

RF-MOSFET-1200V

RF-MOSFET-1200V 数据手册

与RF-MOSFET-1200V相关器件

与RF-MOSFET-1200V相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RF-MOSFET-1200V

RF-MOSFET-1200V 数据手册

与RF-MOSFET-1200V相关器件

与RF-MOSFET-1200V相关文章

您还可以找

您在本页遇到什么问题？