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RF-MOSFET-170V PDF预览

RF-MOSFET-170V

更新时间: 2023-12-06 20:08:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
5页 243K
描述
The VRF family of RF MOSFETs includes improved replacements forindustry-standard RF transistors. T

RF-MOSFET-170V 数据手册

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VRF148A  
VRF148AMP  
50V, 30W, 175MHz  
RF POWER VERTICAL MOSFET  
The VRF148A is a gold-metallized silicon n-channel RF power transistor  
designed for broadband commercial and military applications requiring high  
powerandgainwithoutcompromisingreliability,ruggedness,orinter-modulation  
distortion.  
FEATURES  
• 30:1 Load VSWR Capability at Specied Operating Conditions  
• Improved Ruggedness V(BR)DSS = 170V  
• 30W with 20dB Typical Gain @ 30MHz, 50V  
• 30W with 16dB Typical Gain @ 175MHz, 50V  
• Excellent Stability & Low IMD  
• Nitride Passivated  
• Refractory Gold Metallization  
• High Voltage Replacement for MRF148A  
• RoHS Compliant  
• Common Source Conguration  
• Available in Matched Pairs  
Maximum Ratings  
All Ratings: TC =25°C unless otherwise specied  
Symbol  
Parameter  
VRF148A(MP)  
Unit  
VDSS  
Drain-Source Voltage  
170  
6
V
ID  
VGS  
PD  
Continuous Drain Current @ TC = 25°C  
Gate-Source Voltage  
A
±40  
V
Total Device dissipation @ TC = 25°C  
Storage Temperature Range  
Operating Junction Temperature  
115  
W
TSTG  
TJ  
-65 to 150  
200  
°C  
Static Electrical Characteristics  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
V(BR)DSS  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 1mA)  
On State Drain Voltage (ID(ON) = 2.5A, VGS = 10V)  
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)  
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)  
Forward Transconductance (VDS = 10V, ID = 2.5A)  
Gate Threshold Voltage (VDS = 10V, ID = 10mA)  
170  
V
VDS(ON)  
3.0  
5.0  
0.1  
1.0  
IDSS  
IGSS  
mA  
μA  
gfs  
0.8  
2.9  
mhos  
V
VGS(TH)  
3.6  
4.4  
Thermal Characteristics  
Symbol  
Characteristic  
Min  
Typ  
Max  
Unit  
Junction to Case Thermal Resistance  
1.52  
°C/W  
Rθ  
JC  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  

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