Datasheet > RF-MOSFET-500V

RF-MOSFET-500V

更新时间： 2023-12-06 20:09:48

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	1468K
描述
The ARF family of RF powerMOSFETs is optimized for applications requiring frequencies as high as 1

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RF-MOSFET-500V 数据手册

ARF449A(G)

ARF449B(G)

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

TO-247

Common

Source

RF POWER MOSFETs

N-CHANNELENHANCEMENTMODE

150V

90W 120MHz

The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-

pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Specified 150 Volt, 81.36 MHz Characteristics:

•

Output Power = 90 Watts.

Gain = 13dB (Class C)

Efficiency = 75%

• Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF449A/449B(G)

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

450

Volts

Drain-Gate Voltage

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

Amps

Volts

Watts

°C/W

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Junction to Case

165

R_θJC

T_J,T_STG

T_L

0.76

-55 to 150

300

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

°C

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

UNIT

Symbol

BV_DSS

MIN

TYP

MAX

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

450

Volts

V_DS(ON)

On State Drain Voltage (I_D(ON) = 5A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 5A)

I_DSS

µA

250

±100

I_GSS

g_fs

5.8

mhos

Volts

V_GS(TH)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

中文翻译

下载PDF

与RF-MOSFET-500V相关器件

型号	品牌	获取价格	描述	数据表
RF-MOSFET-80V	MICROCHIP	获取价格	The VRF family of RF MOSFETs includes improved replacements forindustry-standard RF transi
RF-MOSFET-DRIVER	MICROCHIP	获取价格	The DRF1200/01 hybrids integrate drivers, bypass capacitors and RF MOSFETs into a single p
RFMT-10LM-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-10-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-12M-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-15H-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-15M-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-15-SM2	MINI	获取价格	Double Balanced Mixer
RFMT-17H-SM26	MINI	获取价格	Double Balanced Mixer
RFMT-17M-SM26	MINI	获取价格	Double Balanced Mixer