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RE46C128 PDF预览

RE46C128

更新时间: 2022-12-29 04:47:15
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美国微芯 - MICROCHIP /
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8页 196K
描述
CMOS Ionization Smoke Detector ASIC with Interconnect

RE46C128 数据手册

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R&E International  
A Subsidiary of Microchip Technology Inc.  
RE46C128  
CMOS Ionization Smoke Detector ASIC with Interconnect  
Product Specification  
Features  
General Description  
>1500V ESD Protection (HBM) on all Pins  
Guard Outputs for Ion Detector Input  
+/-0.75pA Detect Input Current  
Internal Reverse Battery Protection  
Low Quiescent Current Consumption (<6.5uA)  
Available in 16L PDIP or 16L N SOIC  
Internal Low Battery Detection  
Power Up Low Battery Test  
Interconnect up to 40 Detectors  
Compatible with Allegro A5364  
Available in Standard Packaging or RoHS Compliant  
Pb Free Packaging.  
The RE46C128 is low power CMOS ionization type  
smoke detector IC. With few external components this  
circuit will provide all the required features for an  
ionization type smoke detector.  
An internal oscillator strobes power to the smoke  
detection circuitry for 10.5mS every 1.66 seconds to  
keep standby current to a minimum. A check for a low  
battery condition is performed every 40 seconds when  
in standby. The temporal horn pattern supports the  
NFPA 72 emergency evacuation signal.  
An interconnect pin allows multiple detectors to be  
connected such that when one units alarms all units will  
sound.  
Pin Configuration  
GUARD2  
DETECT  
GUARD1  
VSEN  
OSCAP  
HS  
N/C  
IO  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
Although this device was designed for smoke detection  
utilizing an ionization chamber it could be used in a  
variety of security applications.  
LBADJ  
N/C  
Utilizing low power CMOS technology the RE46C128  
was designed for use in smoke detectors that comply  
with Underwriters Laboratory Specification UL217 and  
UL268.  
LED  
VDD  
RBIAS  
HB  
VSS  
FEED  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Supply Voltage  
Input Voltage Range Except FEED, IO  
FEED Input Voltage Range  
IO Input Voltage Range  
Reverse Battery Time  
Input Current except FEED  
Operating Temperature  
Storage Temperature  
SYMBOL  
VDD  
Vin  
VALUE  
15  
-.3 to Vdd +.3  
-10 to +22  
-.3 to 17  
5
UNITS  
V
V
V
V
S
mA  
°C  
°C  
°C  
Vinfd  
Vio1  
TRB  
Iin  
TA  
TSTG  
TJ  
10  
-10 to 60  
-55 to 125  
150  
Maximum Junction Temperature  
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress  
ratings only and operation at these conditions for extended periods may affect device reliability.  
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when  
handling this product. Damage can occur when exposed to extremely high static electrical charge.  
© 2009 Microchip Technology Inc.  
DS22171A-page 1  

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