Datasheet > RE46C143

RE46C143

更新时间： 2022-11-16 09:50:56

品牌	Logo	应用领域
美国微芯 - MICROCHIP		光电
页数	文件大小	规格书
12页	218K
描述
CMOS Photoelectric Smoke Detector ASIC with Interconnect

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RE46C143 数据手册

R&E International

A Subsidiary of Microchip Technology Inc.

RE46C143

CMOS Photoelectric Smoke Detector ASIC with Interconnect

Product Specification

Features

General Description

•

Internal Power On Reset

The RE46C143 is low power CMOS photoelectric type

smoke detector IC. With minimal external components

this circuit will provide all the required features for a

photoelectric type smoke detector.

Low Quiescent Current Consumption

Available in 16L PDIP or 16L N SOIC

ESD Protection on all Pins

Interconnect up to 40 Detectors

75% Duty Cycle Horn Pattern

Low Battery and Chamber Test

Compatible with Motorola MC145010

Available in Standard Packaging or RoHS

Compliant Pb Free Packaging.

The design incorporates a gain selectable photo

amplifier for use with an infrared emitter/detector pair.

An internal oscillator strobes power to the smoke

detection circuitry for 100us every 8.1 seconds to keep

standby current to a minimum. If smoke is sensed the

detection rate is increased to verify an alarm condition.

A high gain mode is available for push button chamber

testing.

Pin Configuration

A check for a low battery condition and chamber

integrity is performed every 40 seconds when in

standby. The alarm horn pattern utilizes a 75% duty

cycle.

TEST

LBSET

VSS

DETECT

STROBE

An interconnect pin allows multiple detectors to be

connected such that when one units alarms, all units

will sound.

ROSC

COSC

LED

VDD

IRED

Utilizing low power CMOS technology the RE46C143

was designed for use in smoke detectors that comply

with Underwriters Laboratory Specification UL217 and

UL268.

FEED

HORNS

HORNB

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Supply Voltage

Input Voltage Range Except FEED, IO

FEED Input Voltage Range

IO Input Voltage Range

Input Current except FEED

Operating Temperature

SYMBOL

V_DD

V_in

VALUE

12.5

-.3 to V_dd+.3

-10 to +22

-.3 to +17

-25 to 75

-55 to 125

150

UNITS

°C

V_infd

V_io1

I_in

T_A

T_STG

T_J

Storage Temperature

Maximum Junction Temperature

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only and operation at these conditions for extended periods may affect device reliability.

This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when

handling this product. Damage can occur when exposed to extremely high static electrical charge.

DS22178A-page 1

12 3 4 5 6 7...12

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