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RE46C144S

更新时间： 2024-11-06 06:51:51
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美国微芯 - MICROCHIP /
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RE46C144S

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R&E International  
RE46C144  
CMOS Photoelectric Smoke Detector ASIC with Interconnect and Timer Mode  
Product Specification  
Features  
General Description  
•
•
•
•
•
•
•
•
•
Internal Power On Reset  
The RE46C144 is low power CMOS photoelectric type  
smoke detector IC. With minimal external components  
this circuit will provide all the required features for a  
photoelectric type smoke detector.  
Low Quiescent Current Consumption  
Available in 16L PDIP or 16L N SOIC  
ESD Protection on all Pins  
Interconnect up to 40 Detectors  
10 Minute Timer for Sensitivity Control  
75% Duty Cycle Horn Pattern  
The design incorporates a gain selectable photo  
amplifier for use with an infrared emitter/detector pair.  
An internal oscillator strobes power to the smoke  
detection circuitry for 100us every 10 seconds to keep  
standby current to a minimum. If smoke is sensed the  
detection rate is increased to verify an alarm condition.  
A high gain mode is available for push button chamber  
testing.  
Internal Low Battery and Chamber Test  
Compatible with Allegro A5358  
Pin Configuration  
TEST  
VSEN  
VSS  
C1  
C2  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
A check for a low battery condition and chamber  
integrity is performed every 43 seconds when in  
standby. The alarm horn pattern utilizes a 75% duty  
cycle.  
DETECT  
STROBE  
ROSC  
COSC  
LED  
An interconnect pin allows multiple detectors to be  
connected such that when one units alarms, all units  
will sound.  
VDD  
IRED  
IO  
An internal 10 minute timer can be used for a reduced  
sensitivity mode.  
FEED  
HORNS  
HORNB  
Utilizing low power CMOS technology the RE46C144  
was designed for use in smoke detectors that comply  
with Underwriters Laboratory Specification UL217 and  
UL268.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Supply Voltage  
Input Voltage Range Except FEED, IO  
FEED Input Voltage Range  
IO Input Voltage Range  
Input Current except FEED  
Operating Temperature  
SYMBOL  
VDD  
Vin  
VALUE  
15  
-.3 to Vdd +.3  
-10 to +22  
-.3 to 17  
10  
-25 to 75  
-55 to 125  
150  
UNITS  
V
V
V
V
mA  
°C  
°C  
°C  
Vinfd  
Vio1  
Iin  
TA  
TSTG  
TJ  
Storage Temperature  
Maximum Junction Temperature  
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are  
stress ratings only and operation at these conditions for extended periods may affect device reliability.  
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when  
handling this product. Damage can occur when exposed to extremely high static electrical charge.  
Telephone 610.992.0727  
Page 1 of 12  
Facsimile 610.992.0734  
E-mail: rande@randeint.com  
DS-RE46C144-042806  
This datasheet contains PROPRIETARY and CONFIDENTIAL information.  
1234567...12

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