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RE46C121 PDF预览

RE46C121

更新时间: 2022-12-17 01:24:52
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美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 190K
描述
CMOS Ionization Smoke Detector ASIC with Interconnect

RE46C121 数据手册

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R&E International  
A Subsidiary of Microchip Technology Inc.  
RE46C120  
CMOS Ionization Smoke Detector ASIC  
Product Specification  
Features  
General Description  
Guard Outputs for Ion Detector Input  
The RE46C120 is a low power CMOS ionization type  
smoke detector IC. With a few external components  
this circuit will provide all the required features for an  
ionization type smoke detector.  
+/-0.75pA Detect Input Current  
Internal Reverse Battery Protection  
Internal Low Battery Detection  
Pin Selectable Horn Pattern  
Low Quiescent Current Consumption (<6.5uA)  
16L PDIP  
ESD Protection on all Pins  
Compatible with MC145017, MC14467  
Available in RoHS Compliant Pb Free Packaging  
An internal oscillator strobes power to the smoke  
detection circuitry for 10.5mS every 1.66 seconds to  
keep standby current to a minimum. A check for a low  
battery condition is performed every 40 seconds when  
in standby. The TONE input allows for selection of a  
temporal pattern or a 2/3 duty cycle continuous tone.  
The temporal horn pattern supports the NFPA 72  
emergency evacuation signal.  
Pin Configuration  
Although this device was designed for smoke detection  
utilizing an ionization chamber it could be used in a  
variety of security applications.  
DETCOMP  
N/C  
GUARD2  
DETECT  
GUARD1  
VSEN  
OSCAP  
HS  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
LBADJ  
TONE  
Utilizing low power CMOS technology the RE46C120  
was designed for use in smoke detectors that comply  
with Underwriters Laboratory Specification UL217 and  
UL268.  
LED  
VDD  
RBIAS  
HB  
VSS  
FEED  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Supply Voltage  
Input Voltage Range Except FEED  
FEED Input Voltage Range  
Reverse Battery Time  
SYMBOL  
VDD  
Vin  
VALUE  
15  
-.3 to Vdd +.3  
-10 to +22  
5
UNITS  
V
V
V
S
Vinfd  
TRB  
Input Current except FEED  
Operating Temperature  
Storage Temperature  
Iin  
TA  
TSTG  
TJ  
10  
MA  
°C  
°C  
°C  
-10 to 60  
-55 to 125  
150  
Maximum Junction Temperature  
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are  
stress ratings only and operation at these conditions for extended periods may affect device reliability.  
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used  
when handling this product. Damage can occur when exposed to extremely high static electrical charge  
© 2009 Microchip Technology Inc.  
DS22157A-page 1  

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