R&E International
A Subsidiary of Microchip Technology Inc.
RE46C122
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
Product Specification
Features
General Description
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>1500V ESD Protection (HBM) on all Pins
The RE46C122 is low power CMOS ionization type
smoke detector IC. With few external components this
circuit will provide all the required features for an
ionization type smoke detector.
Guard Outputs for Ion Detector Input
+/-0.75pA Detect Input Current
Internal Reverse Battery Protection
Low Quiescent Current Consumption (<6.5uA)
Available in 16L PDIP or 16L N SOIC
Internal Low Battery Detection
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. The temporal horn pattern supports the
NFPA 72 emergency evacuation signal.
Power Up Low Battery Test
Interconnect up to 40 Detectors
10 Minute Timer for Sensitivity Control
Compatible with Allegro A5367
UL Recognized per File S24036
Available in Standard Packaging or RoHS
Compliant Pb Free Packaging.
Pin Configuration
An interconnect pin allows multiple detectors to be
connected such that when one units alarms all units will
sound.
An internal 10 minute timer allows for a separate button
to be used for reduced sensitivity mode.
GUARD2
DETECT
GUARD1
VSEN
OSCAP
HS
TSTART
IO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Although this device was designed for smoke detection
utilizing an ionization chamber it could be used in a
variety of security applications.
LBADJ
TSTROBE
The RE46C122 is recognized by Underwriters
Laboratories for use in smoke detectors that comply
with specification UL217 and UL268.
LED
VDD
RBIAS
HB
VSS
FEED
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDD
Vin
VALUE
15
-.3 to Vdd +.3
-10 to +22
-.3 to 17
5
UNITS
Supply Voltage
V
V
V
V
S
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Reverse Battery Time
Vinfd
Vio1
TRB
Input Current except FEED
Operating Temperature
Storage Temperature
Iin
TA
TSTG
TJ
10
mA
°C
°C
°C
-10 to 60
-55 to 125
150
Maximum Junction Temperature
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
© 2009 Microchip Technology Inc.
DS22173B-page 1