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RD4.3SB1 PDF预览

RD4.3SB1

更新时间: 2024-09-17 15:49:23
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
10页 171K
描述
Zener Diode, 4.245V V(Z), 2.47%, 0.2W, Silicon, Unidirectional, SUPERMINI-2

RD4.3SB1 技术参数

生命周期:Obsolete包装说明:R-PDSO-G2
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:4.11 V
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
最大电压容差:2.47%工作测试电流:5 mA
Base Number Matches:1

RD4.3SB1 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0S to RD150S  
ZENER DIODES  
200 mW 2-PIN SUPER MINI MOLD  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
Type RD2.0S to RD150S series are 2 pin super mini  
mold package zener diodes possessing an allowable  
power dissipation of 200 mW.  
2.5±0.15  
1.7±0.1  
FEATURES  
Sharp breakdown characteristic  
VZ: Applied E24 standard  
Cathode  
Indication  
APPLICATIONS  
Circuit for constant voltage, constant current, wave form  
clipper, surge absorver, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Power Dissipation  
P
IF  
200  
100  
mW  
Forward Current  
mA  
W
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85  
(at t = 10 μs/ 1 pulse) Show Fig.12  
150  
°C  
°C  
Tstg  
–55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No.  
Date Published August 2006 NS CP(K)  
Printed in Japan  
D11444EJ6V0DS00 (6th edition)  
2003  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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