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RD39EB6 PDF预览

RD39EB6

更新时间: 2024-11-10 04:08:35
品牌 Logo 应用领域
日电电子 - NEC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
12页 96K
描述
500 mW DHD ZENER DIODE DO-35

RD39EB6 技术参数

生命周期:Obsolete包装说明:GLASS PACKAGE-2
Reach Compliance Code:unknown风险等级:5.66
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:34.89 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:2.52%
工作测试电流:5 mABase Number Matches:1

RD39EB6 数据手册

 浏览型号RD39EB6的Datasheet PDF文件第2页浏览型号RD39EB6的Datasheet PDF文件第3页浏览型号RD39EB6的Datasheet PDF文件第4页浏览型号RD39EB6的Datasheet PDF文件第5页浏览型号RD39EB6的Datasheet PDF文件第6页浏览型号RD39EB6的Datasheet PDF文件第7页 
DATA SHEET  
ZENER DIODES  
RD2.0E to RD200E  
500 mW DHD ZENER DIODE  
(DO-35)  
DESCRIPTION  
PACKAGE DIMENSIONS  
NEC Type RD2.0E to RD200E Series are planar type zener diode in the  
popular DO-35 package with DHD (Double Heatsink Diode) construction  
having allowable power dissipation of 500 mW. To meet various application  
at customers, Vz (zener voltage) is classified into the tight tolerance under  
the specific suffix (B, B1 to B7).  
(in millimeters)  
φ
0.5  
FEATURES  
Cathode  
indication  
DHD (Double Heatsink Diode) Construction  
Vz: Applied E24 standard (RD130E to RD200E: 10 volts step)  
DO-35 Glass sealed package  
φ
2.0 MAX.  
ORDER INFORMATION  
RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7”  
should be applied for orders for suffix “B”.  
APPLICATIONS  
Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Forward Current  
IF  
200 mA  
500 mW  
Power Dissipation  
P
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (t = 10 µs)  
175 ˚C  
to see Fig. 17  
Tstg  
–65 to +175 ˚C  
Document No. D10213EJ5V0DS00 (5th edition)  
Date Published December 1998 N CP(K)  
Printed in Japan  
1981  
©

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