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RB521S-30 PDF预览

RB521S-30

更新时间: 2024-10-30 11:57:43
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管光电二极管
页数 文件大小 规格书
4页 81K
描述
SMD Schottky Barrier Diode

RB521S-30 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-F2Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:1 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.15 W
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB521S-30 数据手册

 浏览型号RB521S-30的Datasheet PDF文件第2页浏览型号RB521S-30的Datasheet PDF文件第3页浏览型号RB521S-30的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
Comchip  
S M D D i o d e S p e c i a l i s t  
RB521S-30  
Io = 200 mA  
VR = 30 Volts  
RoHS Device  
Features  
SOD-523  
- Low reverse current.  
- Low forward voltage.  
0.008(0.20)  
REF  
0.051(1.30)  
0.043(1.10)  
- Designed for mounting on small surface.  
- Extremely thin package.  
- Majority carrier conduction.  
0.014(0.35)  
0.010(0.25)  
0.033(0.85)  
0.030(0.75)  
0.067(1.70)  
0.059(1.50)  
Mechanical data  
- Case: SOD-523 standard package,  
0.006(0.15)  
0.003(0.08)  
Molded plastic.  
0.031(0.77)  
0.020(0.51)  
- Terminals: solderable per  
MIL-STD-750,method 2026.  
0.003(0.07)  
0.001(0.01)  
- Marking code: cathode band & C  
- Mounting position: Any  
Dimensions in inches and (millimeter)  
- Weight: 0.0012 gram(approx.).  
Circuit Diagram  
Maximum Rating (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
V
DCReverse voltage  
30  
VR  
IO  
mA  
Mean rectkfying current  
200  
8.3ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Peak forward surge current  
IFSM  
1
A
O
Storage temperature  
Junction temperature  
TSTG  
Tj  
+150  
+150  
C
O
-55  
C
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
Forward voltage  
IF = 200 mA  
VR = 10 V  
VF  
0.5  
V
Reverse current  
IR  
30  
µA  
REV:A  
Page 1  
QW-BB044  
Comchip Technology CO., LTD.  

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