Datasheet > RB501V-40

RB501V-40

更新时间： 2024-09-30 06:07:11

品牌	Logo	应用领域
商升特 - SEMTECH		二极管光电二极管局域网
页数	文件大小	规格书
3页	183K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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RB501V-40 数据手册

RB501V-40

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Features

PINNING

• Small surface mounting type

• High reliability

DESCRIPTION

Cathode

Anode

Applications

• Low current rectification

Top View

Marking Code: "S7"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Mean Rectifying Current

0.1

Peak Forward Surge Current (60 Hz for 1 Cyc.)

Junction Temperature

I_FSM

T_j

125

Storage Temperature Range

T_s

- 40 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 10 mA

V_F

0.55

0.34

Reverse Current

at V_R= 10 V

I_R

µA

Capacitance Between Terminals

at V_R= 10 V, f = 1 MHz

C_T

Note: ESD sensitive product handling required.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/09/2006

12 3

中文翻译

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