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RB425D_1 PDF预览

RB425D_1

更新时间: 2024-12-01 06:07:07
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
4页 187K
描述
Shottky barrier diode

RB425D_1 数据手册

 浏览型号RB425D_1的Datasheet PDF文件第2页浏览型号RB425D_1的Datasheet PDF文件第3页浏览型号RB425D_1的Datasheet PDF文件第4页 
RB425D  
Diodes  
Shottky barrier diode  
RB425D  
zApplication  
zDimensions (Unit : mm)  
zLead size figure (Unit : mm)  
Low current rectification  
㪈㪅㪐  
ꢆꢁꢇrꢀꢁꢆ  
㧗ꢀꢁꢃ  
Each  
le  
ad  
has same dimension  
ꢀꢁꢂ  
zFeatures  
ޓ
㧙ꢀꢁꢀꢉ  
㧗ꢀꢁꢃ  
ꢀꢁꢃꢉ  
ꢄ㧙ꢀꢁꢀꢅ  
㪇㪅㪐㪌  
ꢊꢌꢋ  
1) Small mold type. (SMD3)  
2) Low IR  
3) High reliability.  
㪇㪅㪏㪤㪠㪥㪅  
㪪㪤㪛㪊  
ꢀ㨪ꢀꢁꢃ  
ꢊꢆꢋ  
ꢊꢃꢋ  
ꢀꢁꢈrꢀꢁꢃ  
ꢀꢁꢇꢉ  
ꢀꢁꢇꢉ  
ꢃꢁꢇrꢀꢁꢆ  
ꢃꢁꢃrꢀꢁꢆ  
ꢄꢄꢄꢄꢄꢀꢁꢀꢃ  
zStructure  
zStructure  
Silicon epitaxial planar  
㪩㪦㪟㪤㩷㪑㩷㪪㪤㪛㪊  
㪡㪜㪛㪜㪚㩷㪑㪪㪇㪫㪄㪊㪋㪍  
㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪌㪐  
㫎㪼㪼㫂㩷㪺㫆㪻㪼  
zTaping dimensions (Unit : mm)  
㱢㪈㪅㪌㫧㪇㪅㪈  
䇭䇭䇭䇭䇭㩷㩷㪇  
㪉㪅㪇㫧㪇㪅㪇㪌  
㪋㪅㪇㫧㪇㪅㪈  
㪇㪅㪊㫧㪇㪅㪈  
㱢㪈㪅㪇㪌㪤㪠㪥  
㪋㪅㪇㫧㪇㪅㪈  
㪊㪅㪉㫧㪇㪅㪈  
㪈㪅㪊㪌㫧㪇㪅㪈  
zAbsolute maximum ratings (Ta=25qC)  
Parameter  
Limits  
40  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
V
Average rectified forward currenẗ́*1ͅ  
100  
1
Io  
mA  
Forward current surge peak 60Hz1cyc䋩䋨*1䋩  
IFSM  
Tj  
A
Junction temperature  
Storage temperature  
125  
-40 to +125  
Tstg  
(*1)Rating of per diode  
zElectrical characteristics (Ta=25qC)  
Parameter  
Conditions  
Symbol Min.  
Typ.  
Max.  
0.55  
0.34  
30  
Unit  
VF1  
VF2  
IR1  
-
-
-
-
-
-
V
V
IF=100mA  
Forward voltage  
IF=10mA  
VR=10V  
Reverse current  
-
μA  
pF  
VR=10V , f=1MHz  
Capacitance between terminals  
Ct1  
6
-
Rev.B  
1/3  

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