Datasheet > RB441Q-40

RB441Q-40

更新时间： 2024-12-01 09:37:55

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	134K
描述
SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES

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RB441Q-40 数据手册

RB441Q-40

SILICON EPITAXIAL PLANAR TYPE

SCHOTTKY BARRIER DIODES

for low current rectification

Max. 0.45

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Features

Black

Part No.

XXX

• Low forward rise voltage (V_F)

• Small pitch enables insertion on PCBs

• Glass sealed envelope for high reliability

•

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Mean Rectifying Current

Peak Forward Surge Current

Junction Temperature

Storage Temperature Range

100

I_FSM

T_j

125

T_S

- 40 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

0.34

0.55

V_F

Reverse Current

at V_R= 40 V

I_R

100

µA

Terminal Capacitance

at V_R= 10 V, f = 1 MHz

C_T

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 25/06/2007

中文翻译

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RB441QT-14A	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 20V V(RRM), Silicon, ULTRA SMALL PACKAGE-2