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RB400DT146 PDF预览

RB400DT146

更新时间: 2024-11-29 12:14:07
品牌 Logo 应用领域
罗姆 - ROHM 整流二极管肖特基二极管光电二极管PC
页数 文件大小 规格书
4页 352K
描述
Schottky Barrier Diode

RB400DT146 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:12 weeks风险等级:1.35
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:471876Samacsys Pin Count:3
Samacsys Part Category:Schottky DiodeSamacsys Package Category:Other
Samacsys Footprint Name:SOT-346Samacsys Released Date:2018-09-07 12:19:20
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1最大非重复峰值正向电流:3 A
元件数量:1端子数量:3
最高工作温度:125 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB400DT146 数据手册

 浏览型号RB400DT146的Datasheet PDF文件第2页浏览型号RB400DT146的Datasheet PDF文件第3页浏览型号RB400DT146的Datasheet PDF文件第4页 
Data Sheet  
Schottky Barrier Diode  
RB400D  
Applications  
Dimensions(Unit : mm)  
Land size figure (Unit : mm)  
1.9  
Low current rectification  
2.9±0.2  
Each lead has same dimension  
+0.1  
0.4  
ꢀ-0.05  
0.1  
0.06  
0.95  
Features  
0.15  
(3)  
1) Small mold type. (SMD3)  
2) Low IR  
3) High reliability.  
0.8MIN.  
SMD3  
0~0.1  
(2)  
0.95  
(1)  
0.8±0.1  
0.95  
1.9±0.2  
Construction  
1.1±0.2  
0.01  
Silicon epitaxial planer  
Structure  
ROHM : SMD3  
JEDEC :S0T-346  
JEITA : SC-59  
week code  
Taping specifications(Unit : mm)  
φ1.5±0.1  
2.0±0.05  
4.0±0.1  
0.3±0.1  
ꢀꢀꢀꢀꢀ  
0
φ1.05MIN  
4.0±0.1  
3.2±0.1  
1.35±0.1  
Absolute maximum ratings(Ta=25°C)  
Parameter  
Limits  
40  
Symbol  
Unit  
V
VRM  
VR  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
V
Average rectified forward current(*1)  
Forward current surge peak (60Hz / 1cyc)(*1)  
Junction temperature  
500  
3
Io  
IFSM  
mA  
A
125  
Tj  
°C  
°C  
Storage temperature  
40 to 125  
Tstg  
(*1) Rating of per diode  
Electrical characteristics(Ta=25°C)  
Parameter  
Conditions  
IF=500mA  
Symbol  
VF  
Min.  
Typ.  
Max.  
0.55  
30  
50  
-
Unit  
V
Forward voltage  
Reverse current  
-
-
-
-
-
-
-
IR1  
μA  
μA  
pF  
pF  
VR=10V  
VR=30V  
IR2  
-
Ct1  
Ct2  
125  
20  
VR=0V , f=1MHz  
VR=10V , f=1MHz  
Capacitance between terminals  
-
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  
2011.04 - Rev.B  

RB400DT146 替代型号

型号 品牌 替代类型 描述 数据表
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