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RB400VAM-50 PDF预览

RB400VAM-50

更新时间: 2024-11-10 11:15:55
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
8页 2193K
描述
RB400VAM-50是一般整流用的肖特基势垒二极管。

RB400VAM-50 数据手册

 浏览型号RB400VAM-50的Datasheet PDF文件第2页浏览型号RB400VAM-50的Datasheet PDF文件第3页浏览型号RB400VAM-50的Datasheet PDF文件第4页浏览型号RB400VAM-50的Datasheet PDF文件第5页浏览型号RB400VAM-50的Datasheet PDF文件第6页浏览型号RB400VAM-50的Datasheet PDF文件第7页 
RB400VAM-50  
Schottky Barrier Diode  
Data sheet  
Outline  
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ꢀ ꢀ ꢀ  
V
40  
0.5  
3
V
A
A
R
I
o
I
FSM  
ꢀ ꢀ ꢀ  
Features  
Inner Circuit  
High reliability  
Small mold type  
Low V  
F
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
180  
8
3000  
TR  
V
Taping Width(mm)  
Basic Ordering Unit(pcs)  
Taping Code  
Structure  
Silicon epitaxial planar  
Marking  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Limits  
Unit  
V
V
V
50  
RM  
V
Reverse direct voltage  
40  
R
Glass epoxy mounted  
I
60Hzhalf sin waveformresistive load、  
Average rectified forward current  
0.5  
3
A
A
o
T =130Max.  
c
60Hzhalf sin waveformNon-repetitive、  
I
Peak forward surge current  
FSM  
one cycleT =25℃  
a
Junction temperature(1)  
Storage temperature  
-
-
150  
-55 150  
T
j
T
stg  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
d
j
th(j-a)  
(T =25ºC unless otherwise specified)  
Characteristics  
j
Parameter  
Forward voltage  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =0.5A  
-
-
-
-
-
-
-
-
0.55  
30  
50  
-
V
F
F
I
V =10V  
μA  
μA  
pF  
pF  
R1  
R
Reverse current  
I
V =30V  
R2  
R
C
V =0V f=1MHz  
130  
25  
t1  
R
Capacitance between terminals  
Attention  
C
t2  
V =10V f=1MHz  
R
-
www.rohm.com  
©2016 ROHMCo., Ltd.All rights reserved.  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ  
1/5  
2017/05/16_Rev.001  

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