Datasheet > RA45H4045MR

RA45H4045MR

更新时间： 2024-02-08 20:42:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
8页	257K
描述
400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

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技术参数
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RA45H4045MR 技术参数

生命周期：	Obsolete	包装说明：	FLNG,2.4"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.82
特性阻抗：	50 Ω	构造：	MODULE
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	450 MHz	最小工作频率：	400 MHz
最高工作温度：	110 °C	最低工作温度：	-30 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	FLNG,2.4"H.SPACE
电源：	5,12.5 V	射频/微波设备类型：	NARROW BAND HIGH POWER
子类别：	RF/Microwave Amplifiers	最大电压驻波比：	3
Base Number Matches：	1

RA45H4045MR 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA45H4045MR

RoHS Compliance , 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

BLOCK DIAGRAM

DESCRIPTION

The RA45H4045MR is a 45-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 400- to

450-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>45W, η_T>35% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 400-450MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Reverse PIN type

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA45H4045MR-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA45H4045MR-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA45H4045M

24 Jan 2006

MITSUBISHI ELECTRIC

1/8

12 3 4 5 6 7 8

中文翻译

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与RA45H4045MR相关器件

型号	品牌	获取价格	描述	数据表
RA45H4045MR_10	MITSUBISHI	获取价格	400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4045MR_11	MITSUBISHI	获取价格	RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4045MR-01	MITSUBISHI	获取价格	Narrow Band High Power Amplifier, 400MHz Min, 450MHz Max, 66 X 21 MM, 9.88 MM HEIGHT, H2S,
RA45H4045MR-101	MITSUBISHI	获取价格	400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4047M_06	MITSUBISHI	获取价格	RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M_10	MITSUBISHI	获取价格	400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M-01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4047M-101	MITSUBISHI	获取价格	RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

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