Datasheet > RA45H4045MR-01

RA45H4045MR-01

更新时间： 2024-02-18 23:07:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		高功率电源射频微波
页数	文件大小	规格书
9页	83K
描述
Narrow Band High Power Amplifier, 400MHz Min, 450MHz Max, 66 X 21 MM, 9.88 MM HEIGHT, H2S, 5 PIN

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中文翻译

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技术参数
数据手册

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RA45H4045MR-01 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	20 dBm
最大工作频率：	450 MHz	最小工作频率：	400 MHz
最高工作温度：	110 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND HIGH POWER	最大电压驻波比：	3
Base Number Matches：	1

RA45H4045MR-01 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA45H4045MR

400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA45H4045MR is a 45-watt RF MOSFET Amplifier

BLOCK DIAGRAM

Module for 12.5-volt mobile radios that operate in the 400- to

450-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>45W, h_T>35% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 400-450MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Reverse PIN type

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

ORDERING INFORMATION:

ORDER NUMBER

RA45H4045MR-01

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA45H4045M

5 April 2004

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

中文翻译

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与RA45H4045MR-01相关器件

型号	品牌	获取价格	描述	数据表
RA45H4045MR-101	MITSUBISHI	获取价格	400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4047M_06	MITSUBISHI	获取价格	RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M_10	MITSUBISHI	获取价格	400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M-01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4047M-101	MITSUBISHI	获取价格	RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4047M-E01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4452M	MITSUBISHI	获取价格	440-520MHz 45W 12.5V MOBILE RADIO
RA45H4452M_06	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

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