Datasheet > 射频和微波 > 射频/微波放大器> RA45H4452M

RA45H4452M

更新时间： 2024-09-13 03:38:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		射频和微波射频放大器微波放大器无线高功率电源
页数	文件大小	规格书
9页	94K
描述
440-520MHz 45W 12.5V MOBILE RADIO

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技术参数
数据手册

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RA45H4452M 技术参数

生命周期：	Obsolete	包装说明：	FLNG,2.4"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	20 dBm
功能数量：	1	最大工作频率：	520 MHz
最小工作频率：	440 MHz	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	FLNG,2.4"H.SPACE	电源：	12.5 V
射频/微波设备类型：	NARROW BAND HIGH POWER	子类别：	RF/Microwave Amplifiers
最大电压驻波比：	3	Base Number Matches：	1

RA45H4452M 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA45H4452M

440-520MHz 45W 12.5V MOBILE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA45H4452M is a 45-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 440- to

520-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=12.5V, V_GG=0V)

• P_out>45W, h_T>35% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 440-520MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

ORDERING INFORMATION:

ORDER NUMBER

RA45H4452M-E01

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA45H4452M-01

(Japan - packed without desiccator)

RA45H4452M

23 Dec 2002

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

中文翻译

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与RA45H4452M相关器件

型号	品牌	获取价格	描述	数据表
RA45H4452M_06	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4452M_11	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4452M-01	MITSUBISHI	获取价格	440-520MHz 45W 12.5V MOBILE RADIO
RA45H4452M-101	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA45H4452M-E01	MITSUBISHI	获取价格	440-520MHz 45W 12.5V MOBILE RADIO
RA45H7687M1	MITSUBISHI	获取价格	RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H7687M1_08	MITSUBISHI	获取价格	RF MOSFET MODULE 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H7687M1_10	MITSUBISHI	获取价格	763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H7687M1_11	MITSUBISHI	获取价格	RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H7687M1-101	MITSUBISHI	获取价格	RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

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