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RA45H4047M

更新时间: 2024-01-12 14:00:17
品牌 Logo 应用领域
三菱 - MITSUBISHI 无线
页数 文件大小 规格书
9页 95K
描述
MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO

RA45H4047M 数据手册

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MITSUBISHI RF MOSFET MODULE  
OBSERVE HANDLING PRECAUTIONS  
RA45H4047M  
400-470MHz 45W 12.5V MOBILE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA45H4047M is a 45-watt RF MOSFET Amplifier  
Module for 12.5-volt mobile radios that operate in the 400- to  
470-MHz range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The output  
power and drain current increase as the gate voltage increases.  
With a gate voltage around 4V (minimum), output power and  
drain current increases substantially. The nominal output power  
becomes available at 4.5V (typical) and 5V (maximum). At  
VGG=5V, the typical gate current is 1 mA.  
1
4
This module is designed for non-linear FM modulation, but  
may also be used for linear modulation by setting the drain  
quiescent current with the gate voltage and controlling the  
output power with the input power.  
1
RF Input (Pin)  
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout  
)
FEATURES  
• Enhancement-Mode MOSFET Transistors  
RF Ground (Case)  
(IDD@0 @ VDD=12.5V, VGG=0V)  
• Pout>45W, hT>35% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 400-470MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA45H4047M-E01  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA45H4047M-01  
(Japan - packed without desiccator)  
RA45H4047M  
23 Dec 2002  
MITSUBISHI ELECTRIC  
1/9  

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