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R75IR4120JM3-M PDF预览

R75IR4120JM3-M

更新时间: 2024-10-29 06:25:31
品牌 Logo 应用领域
基美 - KEMET /
页数 文件大小 规格书
13页 1464K
描述
Film Capacitor, Polypropylene, 250V, 20% +Tol, 20% -Tol, 1.2uF, Through Hole Mount, RADIAL LEADED

R75IR4120JM3-M 数据手册

 浏览型号R75IR4120JM3-M的Datasheet PDF文件第6页浏览型号R75IR4120JM3-M的Datasheet PDF文件第7页浏览型号R75IR4120JM3-M的Datasheet PDF文件第8页浏览型号R75IR4120JM3-M的Datasheet PDF文件第10页浏览型号R75IR4120JM3-M的Datasheet PDF文件第11页浏览型号R75IR4120JM3-M的Datasheet PDF文件第12页 
Not for new design. Use new F461-F464 Series.  
R75  
MKP Series  
HIGH PERFORMANCES  
METALLIZED POLYPROPYLENE FILM CAPACITOR  
D.C. AND PULSE APPLICATIONS  
PRODUCT CODE: R75 (Digit 12: 0 to 9)  
ELECTRICAL CHARACTERISTICS  
Rated voltage (VR):  
TEST METHOD AND PERFORMANCE  
Damp heat, steady state:  
Test conditions  
160Vdc - 250Vdc - 400Vdc - 630Vdc -1000Vdc  
for 1 section.  
1250Vdc - 1600Vdc - 2000Vdc  
for 3 sections.  
Temperature:  
Relative humidity (RH):  
Test duration:  
+40°C±2°C  
93% ±2%  
56 days  
Rated temperature (TR): +85°C  
Performance  
Temperature derated voltage:  
The following decreasing factor has to be applied on the  
rated voltage:  
Capacitance change |C/C|: ≤2%  
DF change (tgδ):  
≤10x10-4 at 1kHz  
Insulation resistance:  
≥50% of initial limit.  
+85°C to +105°C: 2.00% per °C for VR (d.c.)  
+85°C to +105°C: 1.25% per °C for VR (a.c.)  
Endurance:  
Test conditions  
Capacitance range:  
1000 pF to 33µF for 1 section.  
1000 pF to 2.2µF for 3 sections.  
Temperature:  
Test duration:  
Voltage applied:  
+85°C±2°C  
2000 h  
1.25xVR  
Capacitance values:  
Performance  
E12 series (IEC 60063 Norm).  
Capacitance change |C/C|: ≤3%  
DF change (tgδ):  
≤10x10-4 at 10kHz for C≤1µF  
≤10x10-4 at 01kHz for C>1µF  
Capacitance tolerances (measured at 1 kHz):  
±5% (J); ±10% (K); ±20% (M).  
Total self-inductance (L): (Lead length ~2 mm)  
Insulation resistance: ≥50% of initial limit.  
Pitch (mm)  
L (nH) ≈  
7.5  
8
10  
9
15  
10  
22.5  
18  
27.5  
18  
37.5  
20  
Resistance to soldering heat:  
Test conditions  
Dissipation factor (DF):  
tgδx10-4 at +25°C±5°C  
Solder bath temperature:  
+260°C±5°C  
kHz  
1
10  
C≤0.1µF  
04  
06  
0.1<C≤1.0µF  
1<C≤4.7µF  
C>4.7µF  
≤10  
Dipping time (with heat screen):10 s±1 s  
≤5  
≤8  
≤6  
Performance  
Capacitance change |C/C|: ≤1%  
100  
≤25  
DF change (tgδ):  
≤10x10-4 at 10kHz for C≤1µF  
≤10x10-4 at 01kHz for C>1µF  
Insulation resistance:  
Insulation resistance:  
≥initial limit.  
Test conditions  
Temperature:  
+25±C°5°C  
Voltage charge time: 1min  
Long term stability (after two years):  
Voltage charge:  
100Vdc  
Storage: standard environmental conditions (see page 12)  
Performance  
Capacitance change |C/C|: ≤0.5%  
Performance  
≥1x105 Mfor C≤0.33µF (5x105 M)*  
≥30000 s for C >0.33µF (150000 s)*  
* Typical value.  
Test voltage between terminations:  
1.6xVR applied for 2 s at +25°C±5°C  
09/2008  
113  

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