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R758-10 PDF预览

R758-10

更新时间: 2024-11-04 22:24:35
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PHOTOMULTlPLlER TUBES

R758-10 数据手册

 浏览型号R758-10的Datasheet PDF文件第2页 
PHOTOMULTlPLlER TUBES  
R636–10, R758–10  
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response  
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type  
GENERAL  
Parameter  
R636–10  
185 to 930  
R758–10  
160 to 930  
Unit  
nm  
Spectral Response  
Wavelength of Maximum Response  
300 to 800  
GaAs (Cs)  
nm  
MateriaI  
Minimum Effective Area  
Photocathode  
3
12  
Fused silica glass  
mm  
Window Material  
Dynode  
UV glass  
Circular–cage  
Structure  
Number of Stages  
9
4
6
pF  
pF  
Anode to Last Dynode  
Anode to All Other Electrodes  
Direct Interelectrode  
Capacitances  
Base  
SuitabIe Socket  
JEDEC No.B11–88  
E678–11A(option)  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Between Anode and Cathode  
Between Anode and Last Dynode  
Value  
1500  
250  
Unit  
Vdc  
Vdc  
mA  
Supply Voltage  
Average Anode Current  
0.001  
CHARACTERISTlCS (at 25 )  
Parameter  
Luminous(2856K)  
Min.  
400  
Typ.  
550  
Max.  
Unit  
A/lm  
at 350nm  
62  
at 632.8nm  
at 852.1nm  
63  
48  
mA/W  
Cathode Sensitivity  
Radiant  
Red/White Ratio (with R–68 filter)  
0.53  
4.5 105  
Gain  
Luminous(2856K)  
at 350nm  
100  
250  
2.8 104  
2.8 104  
A/lm  
A/W  
Anode Sensitivity  
Radiant  
at 632.8nm  
at 852.1nm  
2.2 104  
Anode Dark Current at 10A/lm  
Anode Pulse Rise Time  
Electron Transit Time  
After 30min. storage in darkness  
0.1  
2
20  
nA  
ns  
ns  
2
Time Response  
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
Dy1  
Dy2  
Dy3  
Dy4  
Dy5  
Dy6  
Dy7  
Dy8  
Dy9  
P
Electrodes  
Ratio  
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc,  
K : Cathode, Dy : Dynode,  
P : Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are  
subject to change without notice. No patent right are granted to any of the circuits described herein.  
1994 Hamamatsu Photonics K.K.  
©

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