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R6504ENX PDF预览

R6504ENX

更新时间: 2024-01-01 22:20:44
品牌 Logo 应用领域
罗姆 - ROHM 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 1878K
描述
R6504ENX是具有低导通电阻和高开关速度的功率MOSFET。适合开关应用。

R6504ENX 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.64Is Samacsys:N
雪崩能效等级(Eas):34.8 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):4 A最大漏源导通电阻:1.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

R6504ENX 数据手册

 浏览型号R6504ENX的Datasheet PDF文件第9页浏览型号R6504ENX的Datasheet PDF文件第10页浏览型号R6504ENX的Datasheet PDF文件第11页浏览型号R6504ENX的Datasheet PDF文件第12页浏览型号R6504ENX的Datasheet PDF文件第13页浏览型号R6504ENX的Datasheet PDF文件第14页 
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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