R5007ANJ

更新时间： 2024-09-30 03:38:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	166K
描述
10V Drive Nch MOSFET

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中文翻译

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数据手册

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R5007ANJ 数据手册

R5007ANJ

Transistors

10V Drive Nch MOSFET

R5007ANJ

zDimensions (Unit : mm)

zStructure

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

zFeatures

1) Low on-resistance.

1.24

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V^GSS)

guaranteed to be ±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

0.4

2.7

2.54

0.78

5.08

(1) Base (Gate)

(1) (2) (3)

(2) Collector (Drain)

(3) Emitter (Source)

Each lead has same dimensions

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Taping

Code

Type Basic ordering unit (pieces)

R5007ANJ

1000

∗1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Limits

Symbol

Unit

(1)

(2)

(3)

500

DSS

GSS

(1) Gate

(2) Drain

(3) Source

∗1 Body Diode

∗3

∗1

∗3

∗1

Continuous

Pulsed

Drain current

Continuous

Pulsed

Source current

(Body Diode)

3.5

∗2

Avalanche Current

Avalanche Energy

3.5

°C

Total power dissipation (Tc=25°C)

Channel temperature

150

Tch

Range of storage temperature

−55 to +150

Tstg

∗1 Pw≤10µs, Duty cycle≤1%

∗2 L 500µH, V^DD=50V, R =25Ω, Starting, Tch=25°C

∗3 Limited only by maximum tempterature allowed

zThermal resistance

Parameter

Symbol

Limits

3.13

Unit

Channel to case

Rth(ch-c)

°C/W

1/3

12 3 4

中文翻译

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