Datasheet > R5009ANJ_09

R5009ANJ_09

更新时间： 2024-09-30 06:06:23

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	269K
描述
10V Drive Nch MOSFET

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中文翻译

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数据手册

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R5009ANJ_09 数据手册

10V Drive Nch MOSFET

R5009ANJ

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

zFeatures

1) Low on-resistance.

1.24

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V^GSS) guaranteed to be ±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

0.4

2.7

2.54

0.78

5.08

(1) Base (Gate)

(1) (2) (3)

(2) Collector (Drain)

(3) Emitter (Source)

Each lead has same dimensions

zApplications

zInner circuit

Switching

∗1

zPackaging specifications

Package

Taping

Code

Type Basic ordering unit (pieces)

R5009ANJ

1000

(1)

(1) Gate

(2) Drain

(2)

(3)

∗1 Body Diode

(3) Source

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Limits

Symbol

Unit

500

VDSS

GSS

∗3

∗1

Continuous

Pulsed

Drain current

Continuous

Pulsed

Source current

(Body Diode)

∗1

∗2

4.5

Avalanche Current

Avalanche Energy

5.4

°C

Total power dissipation (Tc=25°C)

Channel temperature

150

Tch

Range of storage temperature

−55 to +150

Tstg

∗1 Pw≤10µs, Duty cycle≤1%

∗2 L 500µH, V^DD=50V, R =25Ω, Starting, Tch=25°C

∗3 Limited only by maximum tempterature allowed

zThermal resistance

Parameter

Symbol

Limits

2.5

Unit

Channel to case

Rth(ch-c)

°C/W

www.rohm.com

2009.02 - Rev.A

1/5

12 3 4 5 6

中文翻译

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