5秒后页面跳转
R500CH20C2G5 PDF预览

R500CH20C2G5

更新时间: 2023-02-26 15:47:29
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
13页 357K
描述
Silicon Controlled Rectifier, 4980 A, 2000 V, SCR, 101A281, 3 PIN

R500CH20C2G5 数据手册

 浏览型号R500CH20C2G5的Datasheet PDF文件第2页浏览型号R500CH20C2G5的Datasheet PDF文件第3页浏览型号R500CH20C2G5的Datasheet PDF文件第4页浏览型号R500CH20C2G5的Datasheet PDF文件第5页浏览型号R500CH20C2G5的Datasheet PDF文件第6页浏览型号R500CH20C2G5的Datasheet PDF文件第7页 
Date:- 11 Jan, 2000  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Thyristor  
Types R500CH20 to R500CH28  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
2000-2800  
2000-2800  
2000-2800  
2100-2900  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
V
V
V
V
MAXIMUM  
LIMITS  
2475  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, 25°C, (note 2)  
D.C. on-state current, 25°C, (note 4)  
A
A
A
A
A
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
W
W
V
°C  
°C  
1645  
950  
4980  
4100  
31.0  
34.1  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
4.81×106  
5.81×106  
1000  
1500  
5
5
50  
I2t  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
Storage temperature range  
diT/dt  
VRGM  
PG(AV)  
PGM  
VGD  
THS  
Tstg  
0.25  
-40 to +125  
-40 to +150  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1  
Page 1 of 13  
January, 2000  

与R500CH20C2G5相关器件

型号 品牌 获取价格 描述 数据表
R500CH20C2G7 IXYS

获取价格

Silicon Controlled Rectifier, 4980 A, 2000 V, SCR, 101A281, 3 PIN
R500CH20C2G9 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 1800V V(RRM), 1 Element, 101A28
R500CH20C2H1 IXYS

获取价格

Silicon Controlled Rectifier, 4980 A, 2000 V, SCR, 101A281, 3 PIN
R500CH20C2H2 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 400V V(RRM), 1 Element, 101A281
R500CH20C2H3 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 600V V(RRM), 1 Element, 101A281
R500CH20C2H5 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 1000V V(RRM), 1 Element, 101A28
R500CH20C2H6 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 1200V V(RRM), 1 Element, 101A28
R500CH20C2H9 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 1800V V(RRM), 1 Element, 101A28
R500CH20CD2 IXYS

获取价格

Silicon Controlled Rectifier, 4980 A, 2000 V, SCR, 101A281, 3 PIN
R500CH20CD3 IXYS

获取价格

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 600V V(RRM), 1 Element, 101A281