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R325CH08DHO PDF预览

R325CH08DHO

更新时间: 2024-11-18 03:11:03
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 145K
描述
Silicon Controlled Rectifier, 1852.6 A, 800 V, SCR

R325CH08DHO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:30 µs配置:SINGLE
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:3 VJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1852.6 A重复峰值关态漏电流最大值:150000 µA
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR

R325CH08DHO 数据手册

 浏览型号R325CH08DHO的Datasheet PDF文件第2页 

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