Datasheet > R2619ZC21L

R2619ZC21L

更新时间： 2024-11-01 15:49:07

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
12页	629K
描述
Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2100V V(DRM), 2100V V(RRM), 1 Element,

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数据手册

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R2619ZC21L 数据手册

Date:- 4 Mar, 2003

Data Sheet Issue:- 3

Distributed Gate Thyristor

Type R2619ZC18# to R2619ZC25#

(Old Type Number: R600CH18-21)

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1800-2500

1800-2100

1900-2200

MAXIMUM

LIMITS

2619

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

1792

1037

5227

4395

33.8

A²s

A/µs

I_TSM2

37.2

I²t

5.71×10⁶

6.92×10⁶

1000

I²t

(di/dt)_cr

1500

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

T_{j op}

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Type R2619ZC18# to R2619ZC25# Issue 3

Page 1 of 12

March, 2003

12 3 4 5 6 7...12

中文翻译

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与R2619ZC21L相关器件

型号	品牌	获取价格	描述	数据表
R2619ZC24J	IXYS	获取价格	Silicon Controlled Rectifier, 5227A I(T)RMS, 2400V V(DRM), 2100V V(RRM), 1 Element
R2619ZC24K	IXYS	获取价格	Silicon Controlled Rectifier, 5227A I(T)RMS, 2400V V(DRM), 2100V V(RRM), 1 Element
R2619ZC25J	IXYS	获取价格	Silicon Controlled Rectifier, 5227A I(T)RMS, 2500V V(DRM), 2100V V(RRM), 1 Element,
R2619ZC25J	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4
R2619ZC25K	IXYS	获取价格	Silicon Controlled Rectifier, 5227A I(T)RMS, 2500V V(DRM), 2100V V(RRM), 1 Element,
R2619ZC25L	IXYS	获取价格	Silicon Controlled Rectifier, 5227A I(T)RMS, 2500V V(DRM), 2100V V(RRM), 1 Element,
R2619ZD18J	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4
R2619ZD18L	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
R2619ZD20J	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
R2619ZD21J	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4

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