5秒后页面跳转
R2000F PDF预览

R2000F

更新时间: 2024-11-11 22:24:51
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管快恢复二极管高压高压快速恢复二极管
页数 文件大小 规格书
2页 37K
描述
HIGH VOLTAGE FAST RECOVERY RECTIFIERS

R2000F 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.76配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3 V
最大非重复峰值正向电流:30 A元件数量:1
最高工作温度:175 °C最大输出电流:0.2 A
最大重复峰值反向电压:2000 V最大反向恢复时间:0.5 µs
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

R2000F 数据手册

 浏览型号R2000F的Datasheet PDF文件第2页 
R1200F THRU R2500F  
HIGH VOLTAGE FAST RECOVERY RECTIFIERS  
VOLTAGE RANGE  
1200 to 2500 Volts  
CURRENT  
500 & 200 m Ampere  
FEATURES  
* Low forward voltage drop  
* High current capability  
* High reliability  
DO-41  
.107(2.7)  
.080(2.0)  
DIA.  
* High surge current capability  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
* Case: Molded plastic  
.205(5.2)  
.166(4.2)  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: Axial leads, solderable per MIL-STD-202,  
method 208 guranteed  
* Polarity: Color band denotes cathode end  
* Mounting position: Any  
1.0(25.4)  
MIN.  
.034(.9)  
*
Weight: 0.34 grams  
.028(.7)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature uniess otherwies specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
R1200F R1500F R1600F R1800F R2000F R2500F UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
1200  
840  
1500  
1050  
1500  
1600  
1120  
1600  
1800  
1260  
1800  
2000  
1400  
2000  
2500  
1750  
2500  
Maximum DC Blocking Voltage  
1200  
Maximum Average Forward Rectified Current  
200  
3.0  
500  
2.0  
mA  
.375"(9.5mm) Lead Length at Ta=50 C  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
A
30  
Maximum Instantaneous Forward Voltage at 0.5A/0.2A D.C.  
V
Maximum DC Reverse Current  
Ta=25 C  
5.0  
mA  
at Rated DC Blocking Voltage  
Ta=100 C  
100  
500  
40  
mA  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range TJ, TSTG  
nS  
pF  
C
-65 +175  
NOTES:  
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  

与R2000F相关器件

型号 品牌 获取价格 描述 数据表
R2000F-13 DIODES

获取价格

Rectifier Diode, 1 Element, 0.5A, 2000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
R2000F-B DIODES

获取价格

Rectifier Diode, 1 Element, 0.5A, 2000V V(RRM), Silicon, DO-41, DO-41, 2 PIN
R2000FG RECTRON

获取价格

Reverse Voltage Vr : 2000 V;Forward Current Io : 0.5 A;Max Surge Current : 20 A;Forward Vo
R2000FGP MCC

获取价格

Tape : 5K/Reel, 20K/Ctn; Bulk: 1K/Box, 50K/Ctn; T/B: 5K/Ammo Box, 50K/Ctn.;
R2000FH02 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41
R2000FH02-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41
R2000FH02-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41
R2000FH02-3 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41
R2000FH02-4 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41
R2000FH02-5 RECTRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 2000V V(RRM), Silicon, DO-41