5秒后页面跳转
R2000 PDF预览

R2000

更新时间: 2024-09-28 22:24:51
品牌 Logo 应用领域
RECTRON 整流二极管高压
页数 文件大小 规格书
2页 22K
描述
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)

R2000 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.31
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):4.5 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:2000 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

R2000 数据手册

 浏览型号R2000的Datasheet PDF文件第2页 
R1200  
THRU  
R2000  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HIGH VOLTAGE SILICON RECTIFIER  
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere  
FEATURES  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-41  
MECHANICALDATA  
* Case: Molded plastic  
.034 (0.9)  
DIA.  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.028 (0.7)  
1.0 (25.4)  
MIN.  
* Weight: 0.35 gram  
.205 (5.2)  
.166 (4.2)  
.107 (2.7)  
DIA.  
.080 (2.0)  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
R1200  
R1500  
R1800  
R2000  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
V
V
RRM  
RMS  
1200  
840  
1500  
1050  
1500  
1800  
1260  
1800  
2000  
1400  
2000  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
V
DC  
O
1200  
Maximum Average Forward Rectified Current  
I
500  
200  
mAmps  
Amps  
at TA  
= 50oC  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
30  
30  
Typical Junction Capacitance (Note)  
C
J
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
R1200  
R1500  
2.0  
R1800  
R2000  
3.0  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC  
V
F
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
@T  
A
A
= 25oC  
=100oC  
5.0  
50  
30  
uAmps  
uAmps  
I
R
Maximum Full Load Reverse Current Average, Full Cycle  
.375”, (9.5mm) lead length at T  
= 75oC  
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts.  
L
Z
2001-6  

与R2000相关器件

型号 品牌 获取价格 描述 数据表
R2000?? MDD

获取价格

DO-41/DO-15
R200015 SURGE

获取价格

Rectifier Diode, 1 Element, 0.2A, 3000V V(RRM), Silicon, DO-15, 6, 2 PIN
R2000-DO-15 HDSEMI

获取价格

DO-15 Plastic-Encapsulate Diodes
R2000-DO-41 HDSEMI

获取价格

DO-41 Plastic-Encapsulate Diodes
R2000F SURGE

获取价格

Rectifier Diode, 1 Element, 0.2A, 3000V V(RRM), Silicon, DO-41, 5, 2 PIN
R2000F HVGT

获取价格

200mA 2.0kV 500nS-HIGH VOLTAGE DIODE
R2000F DIODES

获取价格

HIGH VOLTAGE RECTIFIER
R2000F LRC

获取价格

HIGH VOLTAGE FAST RECOVERY DIODES
R2000F GOOD-ARK

获取价格

HIGH VOLTAGE FAST RECOVERY RECTIFIERS
R2000F MCC

获取价格

500 Milliamp High Voltage Fast Recovery Silicon Rectifier 1200 to 2000 Volts