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R1988CH12EDO PDF预览

R1988CH12EDO

更新时间: 2024-11-12 05:39:51
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 145K
描述
Silicon Controlled Rectifier, 4466.65 A, 1200 V, SCR

R1988CH12EDO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLEJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:4466.65 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCR

R1988CH12EDO 数据手册

 浏览型号R1988CH12EDO的Datasheet PDF文件第2页 

与R1988CH12EDO相关器件

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R1988CH12EEO IXYS

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Silicon Controlled Rectifier, 4466.65 A, 1200 V, SCR
R1988CH12EWO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
R1988CH12F2DO IXYS

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Silicon Controlled Rectifier, 4466.65 A, 1200 V, SCR
R1988CH12F2GO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
R1988CH12F4GO IXYS

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Silicon Controlled Rectifier, 4466.65 A, 1200 V, SCR
R1988CH12F6HO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
R1988CH12FDO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
R1988CH12FEO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
R1988CH14C2DO IXYS

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Silicon Controlled Rectifier, 4466.65 A, 1400 V, SCR
R1988CH14C4GO IXYS

获取价格

Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element