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R1988CH12EWO PDF预览

R1988CH12EWO

更新时间: 2024-11-11 18:53:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 145K
描述
Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element

R1988CH12EWO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:4466.65 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

R1988CH12EWO 数据手册

 浏览型号R1988CH12EWO的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, 4466.65 A, 1200 V, SCR
R1988CH12F2GO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
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R1988CH14C4GO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element
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Silicon Controlled Rectifier, 4466.65 A, 1400 V, SCR
R1988CH14C8KO IXYS

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Silicon Controlled Rectifier, 4466.65A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element