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QS6M3_1 PDF预览

QS6M3_1

更新时间: 2024-11-21 06:06:19
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
8页 110K
描述
2.5V Drive Nch+Pch MOSFET

QS6M3_1 数据手册

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QS6M3  
Transistors  
2.5V Drive Nch+Pch MOSFET  
QS6M3  
zDimensions (Unit : mm)  
zStructure  
Silicon N-channel / P-channel MOSFET  
TSMT6  
1.0MAX  
2.9  
1.9  
0.95 0.95  
0.85  
0.7  
zFeatures  
(6)  
(5)  
(4)  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT6).  
0~0.1  
(1)  
(2)  
(3)  
1pin mark  
0.16  
0.4  
Each lead has same dimensions  
zApplication  
Abbreviated symbol : M03  
Power switching, DC / DC converter.  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TR  
(6)  
(5)  
(4)  
Type  
Code  
2  
2  
Basic ordering unit (pieces)  
3000  
QS6M3  
(1) Tr1 (Nch) Gate  
(2) Tr2 (Pch) Source  
(3) Tr2 (Pch) Gate  
(4) Tr2 (Pch) Drain  
(5) Tr1 (Nch) Source  
(6) Tr1 (Nch) Drain  
1  
1  
zAbsolute maximum ratings (Ta=25°C)  
(1)  
(2)  
(3)  
Limits  
Tr1 : Nch  
Parameter  
Symbol  
Unit  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Tr2 : Pch  
20  
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
30  
12  
V
12  
V
Continuous  
Pulsed  
1.5  
6.0  
0.8  
6.0  
1.5  
A
Drain current  
1  
IDP  
6.0  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.75  
6.0  
A
A
1  
2  
ISP  
1.25  
0.9  
W / TOTAL  
W / ELEMENT  
°C  
Total power dissipation  
Channel temperature  
PD  
150  
Tch  
55 to +150  
Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
Tstg  
°C  
zThermal resistance  
Parameter  
Symbol  
Limits  
100  
Unit  
°C / W / TOTAL  
°C / W / ELEMENT  
Channel to ambient  
Rth (ch-a)  
139  
Mounted on a ceramic board  
Rev.B  
1/7  

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