Datasheet > QS6M4_1

QS6M4_1

更新时间： 2024-11-21 06:06:19

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	99K
描述
2.5V Drive Nch+Pch MOSFET

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中文翻译

获取价格

数据手册

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QS6M4_1 数据手册

QS6M4

Transistors

2.5V Drive Nch+Pch MOSFET

QS6M4

zDimensions (Unit : mm)

zStructure

Silicon P-channel MOSFET

Silicon N-channel MOSFET

TSMT6

1.0MAX

2.9

1.9

0.95 0.95

0.85

0.7

(6)

(5)

(4)

zFeatures

1) The QS6M4 combines Pch MOSFET with a Nch

MOSFET in a single TSMT6 package.

2) Low on-state resistance with a fast switching.

3) Low voltage drive (2.5V).

0~0.1

(1)

(2)

(3)

1pin mark

0.16

0.4

Each lead has same dimensions

Abbreviated symbol : M04

zApplications

Load switch, inverter

zPackaging specifications

zEquivalent circuit

(6)

(5)

(4)

∗2

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

3000

QS6M4

∗2

(1) Tr1 (Nch) Source

(2) Tr1 (Nch) Gate

(3) Tr2 (Pch) Drain

(4) Tr2 (Pch) Source

(5) Tr2 (Pch) Gate

(6) Tr1 (Nch) Drain

∗1

zAbsolute maximum ratings (Ta=25°C)

Limits

Nchannel

(1)

(2)

(3)

Parameter

Symbol

Unit

Pchannel

−20

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Drain-source voltage

Gate-source voltage

V_DSS

V_GSS

I_D

Continuous

Pulsed

1.5

6.0

0.8

6.0

1.5

Drain current

∗1

I_DP

6.0

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.75

−6.0

∗1

I_SP

W / TOTAL

W / ELEMENT

°C

1.25

0.9

∗2

Total power dissipation

Channel temperature

P_D

150

Tch

−55 to +150

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

°C

zThermal resistance

Parameter

Symbol

Limits

100

Unit

°C / W / TOTAL

°C / W / ELEMENT

∗

Channel to ambient

Rth (ch-a)

139

∗ Mounted on a ceramic board

Rev.B

1/5

12 3 4 5 6

中文翻译

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