Datasheet > QS6U24

QS6U24

更新时间： 2024-11-20 22:21:23

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
4页	47K
描述
Small switching (−30V, −1A)

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中文翻译

获取价格

数据手册

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QS6U24 数据手册

QS6U24

Transistor

Small switching (−30V, −1A)

QS6U24

!External dimensions (Units : mm)

!Features

1) The QS6U24 conbines Pch Treueh MOSFET with a

Schottky barrier diode in a single TSMT6 package.

2) Pch Treueh MOSFET have a low on-state resisternce

with a fast switching.

2.8

1.6

TSMT6

1pin mark

(1)Anode

(2)Source

(3)Gate

(4)Drain

(5)N/C

3) Pch Treueh MOSFET is neucted a low voltage drive

(4V).

4) The independently connected Schottky barrier diode

have a low forward voltage.

(6)Cathode

Each lead has same dimensions

Abbreviated symbol : U24

!Applications

load switch, DC/DC conversion

!Equivalent circuit

!Structure

(6)

(5)

(4)

Silicon P-channel MOS FET

Schottky Barrier DIODE

!Packaging specifications

Package

Taping

(1)Anode

(2)Source

(3)Gate

Code

Type

(4)Drain

(5)N/C

(6)Cathode

Basic ordering unit (pieces)

3000

(1)

(2)

(3)

1 ESD protection diode

2 Body diode

QS6U24

A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

!Absolute maximum ratings (Ta=25°C)

MOSFET

Parameter

Symbol

Limits

−30

Unit

VDSS

Drain-source voltage

Gate-source voltage

VGSS

±20

±1.0

±2.0

−0.3

−1.2

150

Continuous

Pulsed

Drain current

Source current

(Body diode)

Continuous

Pulsed

Tch

°C

Channel temperature

Parameter

Symbol

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

0.7

Forward current

FSM

3.0

Forward current surge peak

Junction temperature

125

°C

MOSFET AND Di

Parameter

Symbol

Limits

1.0

Unit

Total power dissipatino

W/Total

Tstg

−40~+125

°C

Range of strage temperature

1 Pw≤10µs, Duty cycle≤1% 2 60Hz

•

1cyc. 3 Total mounted on a ceramic board

1/3

12 3 4

中文翻译

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