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QCA30B40 PDF预览

QCA30B40

更新时间: 2024-02-18 08:19:22
品牌 Logo 应用领域
SANREX 晶体晶体管
页数 文件大小 规格书
2页 510K
描述
TRANSISTOR MODULE

QCA30B40 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.82
最大集电极电流 (IC):30 A最小直流电流增益 (hFE):75
最大降落时间(tf):2000 ns元件数量:1
最高工作温度:150 °C最大功率耗散 (Abs):250 W
最大上升时间(tr):1000 ns子类别:BIP General Purpose Power
VCEsat-Max:2 V

QCA30B40 数据手册

 浏览型号QCA30B40的Datasheet PDF文件第2页 
TRANSISTOR MODULE  
QCA30B/QCB30A40/60  
UL;E76102 M  
QCA30B and QCB30A are dual Darlington power  
transistor modules which have series-connected high speed,  
high power Darlington transistors. Each transistor has a  
reverse paralleled fast recovery diode.  
C
CEX  
I
30A, V  
400/600V  
Low saturation voltage for higher efficiency.  
Isolated mounting base  
EBO  
V
10V for faster switching speed.  
Applications  
Motor Control VVVF , AC/DC Servo, UPS,  
Switching Power Supply, Ultrasonic Application  
QCA  
QCB  
Unit  
A
Maximum Ratings  
Tj 25  
Ratings  
QCA30B40 QCA30B60  
QCB30A40 QCB30A60  
Symbol  
Item  
Conditions  
Unit  
VCBO  
VCEX  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
400  
400  
600  
600  
V
V
VBE  
2V  
10  
V
A
A
A
W
=pw 1ms  
30 60  
30  
Reverse Collector Current  
Base Current  
IC  
B
I
2
T
P
Total power dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
250  
TC 25  
j
T
40  
40  
150  
125  
Tstg  
VISO  
A.C.1minute  
2500  
V
Mounting M6 Recommended Value 2.5 3.9 25 40  
Terminal M5 Recommended Value 1.5 2.5 15 25  
Mounting M5 Recommended Value 1.5 2.5 15 25  
Terminal M4 Recommended Value 1.0 1.4 10 14  
4.7 48  
2.7 28  
2.7 28  
1.5 15  
240/195  
QCA30B  
QCB30A  
Mounting  
Torque  
N m  
f B  
Mass  
QCA30B/QCB30A  
Typical Value  
g
Electrical Characteristics  
Tj 25  
Ratings  
Symbol  
Item  
Conditions  
Unit  
Min.  
Max.  
1.0  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
mA  
mA  
CB  
EB  
CBO  
V
V
V
300  
EBO  
V
QCA30B40  
QCB30A40  
QCA30B60  
QCB30A60  
QCA30B40  
QCB30A40  
QCA30B60  
QCB30A60  
300  
450  
400  
CEO SUS  
V
V
V
Ic 1A  
Ic 6A  
Collector-Emitter  
Sustaning Voltage  
CEX SUS  
V
B2  
I
5A  
600  
FE  
h
DC Current Gain  
75/100  
CE  
Ic 30A  
Ic 30A  
Ic 30A  
V
2V/5V  
0.4A  
VCE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
On Time  
2.0  
2.5  
V
V
B
I
I
BE(sat)  
ton  
ts  
V
B
0.4A  
1.0  
Vcc 300V Ic 30A  
Switching Time  
Storage Time  
Fall Time  
12.0  
2.0  
s
B1  
I
B2  
I
0.6A  
0.6A  
tf  
ECO  
V
Collector-Emitter Reverse Voltage  
1.4  
V
Ic 30A  
Transistor part Diode part  
Rth(j-c)  
Thermal Impedance (junction to case)  
0.5/1.6  
/W  
1

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