Datasheet > Q68000-A8319

Q68000-A8319

更新时间： 2024-01-07 20:43:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	256K
描述
PNP Silicon Transistors

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中文翻译

获取价格

数据手册

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Q68000-A8319 数据手册

PNP Silicon Transistors

SMBT 5086

SMBT 5087

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30 Hz and 15 kHz

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

SMBT 5086

SMBT 5087

s2P

s2Q

Q62702-M0002

Q68000-A8319

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

VCE0

VCB0

VEB0

˚C

Total power dissipation, T

= 71 ˚C

tot

330

150

Junction temperature

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 310

≤ 240

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4 5 6

中文翻译

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