Datasheet > Q62702-P790

Q62702-P790

更新时间： 2024-10-31 23:06:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	68K
描述
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

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数据手册

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Q62702-P790 数据手册

Ternary PIN Photodiode in TO-Package

with Integrated Optics

SRD 00212Z

• InGaAs/InP - PIN-photodiode

• Designed for application in fiber-optic communication

systems

• Sensitive receiver for the 2^ndand 3^rdoptical window

(1300 nm and 1500 nm)

• Suitable for bit rates up to 1.2 Gbit/s

• Low junction and low package capacitance

• Fast switching times

• Low dark current

• Low noise

• High reverse-current stability by planar structure

• High spectral sensitivity by build in optics

• Hermetically sealed 3-pin metal case

• No z-adjustment necessary (optimum coupling on cap

surface)

Type

Ordering Code

Connector/Flange

TO, with optics

SRD 00212Z

Q62702-P3010

Component with other pin configuration or other package outlines (cap) on request.

Maximum Ratings

Parameter

Symbol

I_F

Values

Unit

Forward current

Reverse voltage

V_R

− 40 … + 85

Operating and storage temperature

T_AT_stg

Φ_port

°C

Max. radiant power into the opt. port

(V_R= 5 V)

Soldering time (wave / dip soldering), distance

between solder point and base plate ≥ 2 mm,

260 °C

t_s

Semiconductor Group

02.95

12 3

中文翻译

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