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PXT3906-TP-HF PDF预览

PXT3906-TP-HF

更新时间: 2024-11-18 19:54:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 438K
描述
Small Signal Bipolar Transistor,

PXT3906-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

PXT3906-TP-HF 数据手册

 浏览型号PXT3906-TP-HF的Datasheet PDF文件第2页浏览型号PXT3906-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
PXT3906  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
·
PNP General  
Purpose Amplifier  
Capable of 500mWatts of Power Dissipation  
Marking:2A  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
-40  
-40  
-6.0  
-0.2  
0.5  
-55 to +150  
-55 to +150  
Unit  
V
V
V
A
W
OC  
OC  
SOT-89  
A
K
Collector Current, Continuous  
B
PD  
TJ  
Power Dissipation  
Operating Junction Temperature  
TSTG  
Storage Temperature  
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
D
V(BR)CEO  
Collector-Emitter Breakdown Voltage*  
(IC=-1.0mAdc, IB=0)  
-40  
Vdc  
G
H
V(BR)CBO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
(IC=-10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-10µAdc, IC=0)  
-40  
Vdc  
Vdc  
J
F
-6.0  
I
Collector cut-off Current  
(VCB=-30Vdc, IE=0  
-0.05  
-0.05  
uAdc  
uAdc  
cBO  
1
2
3
IEBO  
hFE  
Emitter cut-off Current  
(VEB=-6Vdc, IC=0  
DC Current Gain*  
1:Base  
(IC=-10mAdc, VCE=-1.0Vdc)  
(IC=-50mAdc, VCE=-1.0Vdc)  
(IC=-100mAdc, VCE=-1.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-10mAdc, IB=-1.0mAdc)  
(IC=-50mAdc, IB=-5.0mAdc)  
Base-Emitter Saturation Voltage  
(IC=-10mAdc, IB=-1.0mAdc)  
(IC=-50mAdc, IB=-5.0mAdc)  
100  
60  
30  
300  
2:Collector  
3:Emitter  
VCE(sat)  
-0.25  
-0.4  
Vdc  
DIMENSINS  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
VBE(sat)  
ꢈꢀꢇꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
-0.65  
-0.85  
-0.95  
4.5  
Vdc  
pF  
ꢇꢉꢊꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢇꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍꢎꢓꢆ  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢉꢆ  
ꢖꢆ  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
C
C
Outpuut Capacitance  
obo  
(VCB=-5.0Vdc, f=1.0MHz, =0)  
IE  
Inpuut Capacitance  
10  
pF  
ibo  
ꢌꢛꢜꢆ  
(VEB=-0.5Vdc, f=1.0MHz, =0)  
IC  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
fT  
Current Gain-Bandwidth Product  
(IC=-10mAdc, VCE=-20Vdc, f=100MHz)  
Noise Figure  
250  
MHz  
dB  
 ꢆ  
NF  
4.0  
(VCE=-5.0V, f=1.0kHz,IC=-100uA,Rs=1.0K)  
SWITCHING CHARACTERISTICS  
td  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=-3.0Vdc, VBE=-0.5Vdc  
IC=-10mAdc, IB1=-1.0mAdc)  
(VCC=-3.0Vdc, IC=-10mAdc  
IB1=IB2=-1.0mAdc )  
35  
35  
225  
75  
ns  
ns  
ns  
ns  
tr  
ts  
tf  
*Pulse Width 300µs, Duty Cycle2.0%  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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