Datasheet > PXT3906

PXT3906

更新时间： 2024-11-09 09:57:03

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管开关
页数	文件大小	规格书
3页	398K
描述
PNP General Purpose Amplifier

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中文翻译

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数据手册

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PXT3906 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

PXT3906

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Capable of 500mWatts of Power Dissipation

Marking:2A

PNP General

Purpose Amplifier

Maximum Ratings

ꢀ

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

-40

-6.0

-0.2

0.5

-55 to +150

Unit

^OC

SOT-89

Collector Current, Continuous

P_D

T_J

Power Dissipation

Operating Junction Temperature

T_STG

Storage Temperature

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

V_(BR)CEO

Collector-Emitter Breakdown Voltage*

(I_C=-1.0mAdc, I_B=0)

-40

Vdc

V_(BR)CBO

V_(BR)EBO

Collector-Base Breakdown Voltage

(I_C=-10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-10µAdc, I_C=0)

-40

Vdc

-6.0

Collector cut-off Current

(V_CB=-30Vdc, I_E=0

-0.05

uAdc

c^BO

I_EBO

h_FE

Emitter cut-off Current

(V_EB=-6Vdc, I_C=0

ꢀ

DC Current Gain*

1:Base

(I_C=-10mAdc, V_CE=-1.0Vdc)

(I_C=-50mAdc, V_CE=-1.0Vdc)

(I_C=-100mAdc, V_CE=-1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1.0mAdc)

(I_C=-50mAdc, I_B=-5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1.0mAdc)

(I_C=-50mAdc, I_B=-5.0mAdc)

100

300

2:Collector

3:Emitter

V_CE(sat)

-0.25

-0.4

Vdc

DIMENSINS

ꢀꢁꢂꢃꢄꢅꢆ

ꢇꢀꢁꢆ

V_BE(sat)

ꢈꢀꢇꢆ

ꢇꢇꢆ

ꢁꢋꢌꢄꢅꢆ

-0.65

-0.85

-0.95

4.5

Vdc

ꢇꢉꢊꢆ

ꢍꢎꢑꢎꢆ

ꢍꢕꢏꢎꢆ

ꢍꢎꢔꢗꢆ

ꢍꢕꢐꢓꢆ

ꢍꢎꢕꢕꢆ

ꢚꢚꢚꢚꢚꢆ

ꢇꢀꢁꢆ

ꢒꢍꢐꢓꢆ

ꢎꢍꢔꢕꢆ

ꢐꢍꢓꢎꢆ

ꢕꢍꢑꢕꢆ

ꢘꢍꢐꢒꢆ

ꢐꢍꢕꢕꢆ

ꢕꢍꢐꢐꢆ

ꢕꢍꢐꢑꢆ

ꢎꢍꢒꢕꢆ

ꢇꢉꢊꢆ

ꢒꢍꢔꢕꢆ

ꢎꢍꢑꢕꢆ

ꢒꢍꢎꢓꢆ

ꢎꢍꢕꢕꢆ

ꢘꢍꢗꢒꢆ

ꢚꢚꢚꢚꢚꢆ

ꢉꢆ

ꢖꢆ

ꢂꢆ

ꢈꢆ

ꢄꢆ

ꢙꢆ

ꢝꢆ

ꢃꢆ

ꢞꢆ

ꢍꢎꢏꢐꢆ

ꢍꢕꢔꢐꢆ

ꢍꢎꢗꢒꢆ

ꢍꢕꢐꢎꢆ

ꢍꢕꢓꢘꢆ

ꢍꢎꢎꢑꢆ

ꢍꢕꢎꢐꢆ

ꢍꢕꢎꢗꢆ

ꢍꢕꢗꢗꢆ

ꢆ

Outpuut Capacitance

obo

ꢆ

(VCB=-5.0Vdc, f=1.0MHz, =0)

I^E

ꢆ

Inpuut Capacitance

ꢆ

ibo

ꢌꢛꢜꢆ

(VEB=-0.5Vdc, f=1.0MHz, =0)

I_C

ꢍꢕꢎꢓꢆ

ꢍꢕꢘꢎꢆ

ꢍꢕꢎꢔꢆ

ꢍꢕꢔꢐꢆ

ꢕꢍꢒꢑꢆ

ꢕꢍꢗꢐꢆ

ꢕꢍꢒꢎꢆ

ꢎꢍꢔꢕꢆ

ꢆ

f_T

Current Gain-Bandwidth Product

(I_C=-10mAdc, V_CE=-20Vdc, f=100MHz)

Noise Figure

250

MHz

ꢆ

4.0

(VCE=-5.0V, f=1.0kHz,I_C=-100uA,Rs=1.0K)

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=-3.0Vdc, V_BE=-0.5Vdc

I_C=-10mAdc, I_B1=-1.0mAdc)

(V_CC=-3.0Vdc, I_C=-10mAdc

I_B1=I_B2=-1.0mAdc )

225

t_r

t_s

t_f

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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与PXT3906相关器件

型号	品牌	获取价格	描述	数据表
PXT3906,115	NXP	获取价格	PXT3906
PXT3906-T	NXP	获取价格	TRANSISTOR 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-62, 3 PIN, BIP Gene
PXT3906T/R	NXP	获取价格	TRANSISTOR 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-62, 3 PIN, BIP Gene
PXT3906-TAPE-13	NXP	获取价格	TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT3906-TAPE-7	NXP	获取价格	TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT3906-TP	MCC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
PXT3906-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
PXT3906TRL	NXP	获取价格	暂无描述
PXT3906TRL13	YAGEO	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PXT3906TRL13	NXP	获取价格	TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa

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