Datasheet > PV1015UDF12B

PV1015UDF12B

更新时间： 2024-10-28 06:05:59

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	35K
描述
ESD/EMI Filtering

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PV1015UDF12B 数据手册

SEMICONDUCTOR

PV1015UDF12B

TECHNICAL DATA

ESD/EMI Filtering

APPLICATION

· I/O ESD protection for mobile handsets, notebook, PDAs, etc.

· EMI filtering for data ports in cell phones, PDAs, notebook computers

· EMI filtering for LCD, camera and chip-to-chip data lines

GND PAD

Pin 1

FEATURES

· EMI/RFI filtering

TOP VIEW

BOTTOM VIEW

· ESD Protection to IEC 61000-4-2 Level 4

· Low insertion loss

· Good attenuation of high frequency signals

· Low clamping voltage

DIM MILLIMETERS

2.50 0.10

1.35 + 0.10

· Low operating and leakage current

· Six elements in one package

2.00 0.10

0.20 + 0.05

SIDE VIEW

0.40

0.40 + 0.10

1,12 : Filter channel 1

2,11 : Filter channel 2

3,10 : Filter channel 3

4,9 : Filter channel 4

5,8 : Filter channel 5

6,7 : Filter channel 6

DESCRIPTION

0.25 + 0.10

0.20 Min

PV1015UDF12B is an EMI filter array with electrostatic discharge (ESD) protection,

which integrates six pi filters (C-R-C). These parts include ESD protection diodes on

every pin, providing a very high level of protection for sensitive electronic components

that may be subjected to electrostatic discharge.

0.50 + 0.05

0.127

0.02+0.03/-0.02

UDFN-12B

The PV1015UDF12B provides the recommended line termination while implementing a

low pass filter to limit EMI levels and providing ESD protection which exceeds IEC

61000-4-2 level 4 standard. The UDFN package is a very effective PCB space

occupation and a very thin package (0.4mm Pitch, 0.5mm height)

MARKING

Type Name

℃

)

MAXIMUM RATING (Ta=25

CHARACTERISTIC

SYMBOL

RATING

100

UNIT

P_R

*P_D

T_j

DC Power Per Resistor

Lot No.

Power Dissipation

600

Junction Temperature

150

℃

RECOMMENEDED FOOTPRINT

(dimensions in mm)

T_stg

Storage Temperature

-55∼ 150

* Total Package Power Dissipation

EQUIVALENT CIRCUIT

0.40

0.30

100Ω

FILTERn*

0.25

FILTERn*

15pF

1.40

15pF

GND

℃

)

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Cutoff Frequency

SYMBOL

V_RWM

V_BR

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_t=1mA

I_R

V_RWM=3.3V

1.0

μA

MHz

Ω

fc_-3dB

R_LINE

V_Line=0V, Z_SOURCE=50Ω , Z_LOAD=50Ω

Between Input and Output

110

100

Channel Resistance

120

V_Line=0V DC, 1MHz, Between I/O Pins and GND

V_Line=2.5V, 1MHz, Between I/O Pins and GND

C_LINE

Capacitance

2009. 6. 3

Revision No : 2

1/2

中文翻译

下载PDF

与PV1015UDF12B相关器件

型号	品牌	获取价格	描述	数据表
PV1015UDF16B	KEC	获取价格	ESD/EMI Filter
PV1015UDF8B	KEC	获取价格	ESD/EMI Filter
PV10-1R00	RCD	获取价格	2W TO 25 WATT VERTICAL MOUNT RESISTORS
PV10-27B05	MORNSUN	获取价格	NEW POWER SOURCES 200-1200VDC OVERWIDE AND OVERHIGH INPUT VOLTAGE ISOLATION CONVERTER
PV10-27B05R	MORNSUN	获取价格	DC/DC Converter
PV10-27B05R2	MORNSUN	获取价格	DC/DC Converter
PV10-27B09	MORNSUN	获取价格	NEW POWER SOURCES 200-1200VDC OVERWIDE AND OVERHIGH INPUT VOLTAGE ISOLATION CONVERTER
PV10-27B09R2	MORNSUN	获取价格	DC/DC Converter
PV10-27B24	MORNSUN	获取价格	NEW POWER SOURCES 200-1200VDC OVERWIDE AND OVERHIGH INPUT VOLTAGE ISOLATION CONVERTER
PV10-27B24R	MORNSUN	获取价格	DC/DC Converter

与PV1015UDF12B相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

39
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

PV1015UDF12B

PV1015UDF12B 数据手册

与PV1015UDF12B相关器件

与PV1015UDF12B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PV1015UDF12B

PV1015UDF12B 数据手册

与PV1015UDF12B相关器件

与PV1015UDF12B相关文章

您还可以找

您在本页遇到什么问题？