Datasheet > PV1015UDF8B

PV1015UDF8B

更新时间： 2024-10-28 06:05:59

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	35K
描述
ESD/EMI Filter

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中文翻译

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数据手册

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PV1015UDF8B 数据手册

SEMICONDUCTOR

PV1015UDF8B

TECHNICAL DATA

ESD/EMI Filter

APPLICATION

· I/O ESD protection for mobile handsets, notebook, PDAs, etc.

· EMI filtering for data ports in cell phones, PDAs, notebook computers

· EMI filtering for LCD, camera and chip-to-chip data lines

GND PAD

Pin 1

FEATURES

· EMI/RFI filtering

· ESD Protection to IEC 61000-4-2 Level 4

· Low insertion loss

BOTTOM VIEW

TOP VIEW

· Good attenuation of high frequency signals

· Low clamping voltage

DIM MILLIMETERS

1.70 0.10

1.35 + 0.10

· Low operating and leakage current

· Four elements in one package

1.20 0.10

0.20 + 0.05

0.40

SIDE VIEW

0.40 0.10

0.25 0.10

DESCRIPTION

1,8 : Filter channel 1

2,7 : Filter channel 2

3,6 : Filter channel 3

4,5 : Filter channel 4

0.20 Min

PV1015UDF8B is an EMI filter array with electrostatic discharge (ESD) protection,

which integrates four pi filters (C-R-C). These parts include ESD protection diodes on

every pin, providing a very high level of protection for sensitive electronic components

that may be subjected to electrostatic discharge.

0.50 + 0.05

0.127

0.02+0.03/-0.02

The PV1015UDF8B provides the recommended line termination while implementing a

low pass filter to limit EMI levels and providing ESD protection which exceeds IEC

61000-4-2 level 4 standard. The UDFN package is a very effective PCB space

occupation and a very thin package (0.4mm Pitch, 0.5mm height)

UDFN-8B

MARKING

Type Name

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

DC Power Per Resistor

SYMBOL

RATING

100

UNIT

P_R

*P_D

T_j

Lot No.

Power Dissipation

400

Junction Temperature

150

RECOMMENEDED FOOTPRINT

(dimensions in mm)

T_stg

Storage Temperature

-55∼ 150

* Total Package Power Dissipation

0.40

0.30

EQUIVALENT CIRCUIT

100Ω

FILTERn*

0.25

15pF

0.70

GND

℃

)

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Cutoff Frequency

SYMBOL

V_RWM

V_BR

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_t=1mA

I_R

V_RWM=3.3V

1.0

μA

MHz

Ω

fc_-3dB

R_LINE

V_Line=0V, Z_SOURCE=50Ω , Z_LOAD=50Ω

Between Input and Output

110

100

Channel Resistance

120

V_Line=0V DC, 1MHz, Between I/O Pins and GND

V_Line=2.5V, 1MHz, Between I/O Pins and GND

C_LINE

Line Capacitance

2009. 6. 3

Revision No : 2

1/2

中文翻译

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