PUA3117

更新时间： 2024-10-13 22:26:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	83K
描述
Silicon NPN triple diffusion planar type

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数据手册

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PUA3117 数据手册

Power Transistor Arrays

PUA3117 (PU3117)

Silicon NPN triple diffusion planar type

For power amplification and switching

Unit: mm

20.2 0.3

4.0 0.2

■ Features

• High forward current transfer ratio h_FE

• Satisfactory linearity of forward current transfer ratio h_FE

• NPN 3 elements

0.8 0.25

0.5 0.15

1.0 ^0.25

2.54 0.2

■ Absolute Maximum Ratings T_C= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

7 × 2.57 = 17.78 0.25

C 1.5 0.5

1: Emitter

2: Base

3: Collector

4: Base

5: Collector

6: Base

7: Collector

8: Emitter

2 3 4 5 6 7 8

Peak collector current

Base current

I_CP

I_B

SIP8-A1 Package

Collector power dissipation

T_a= 25°C

P_C

2.4

Junction temperature

T_j

150

°C

Storage temperature

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= 25 mA, I_B= 0

V_CB= 80 V, I_E= 0

V_CE= 40 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 4 V, I_C= 0.5 A

100

2 500

1.0

µA



I_CEO

I_EBO

h_FE

500

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 2 A, I_B= 0.05 A

f_TV_CE= 12 V, I_C= 0.2 A, f = 10 MHz

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

■ Internal Connection

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2003

SJK00007AED

12 3

中文翻译

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PUA3120P	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8
PUA3120Q	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8